Abstract
The effect of alloying small amounts of ZnO with ZnSe on the electronic band structure was analyzed. Photoreflectance and photoluminescence spectroscopies were used to study optical transitions in molecular beam epitaxy grown ZnOxSe1-x epitaxial films. The band energy gap of the alloys was found to decrease at a rate of about 0.1 eV per atomic percent of oxygen.
| Original language | English |
|---|---|
| Pages (from-to) | 299-301 |
| Journal | Applied Physics Letters |
| Volume | 83 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 14 Jul 2003 |
| Externally published | Yes |
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SDG 7 Affordable and Clean Energy
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