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Effect of oxygen on the electronic band structure in ZnOxSe1-x alloys

  • W. Shan*
  • , W. Walukiewicz
  • , J. W. Ager III
  • , K. M. Yu
  • , J. Wu
  • , E. E. Haller
  • , Y. Nabetani
  • , T. Mukawa
  • , Y. Ito
  • , T. Matsumoto
  • *Corresponding author for this work

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

Abstract

The effect of alloying small amounts of ZnO with ZnSe on the electronic band structure was analyzed. Photoreflectance and photoluminescence spectroscopies were used to study optical transitions in molecular beam epitaxy grown ZnOxSe1-x epitaxial films. The band energy gap of the alloys was found to decrease at a rate of about 0.1 eV per atomic percent of oxygen.
Original languageEnglish
Pages (from-to)299-301
JournalApplied Physics Letters
Volume83
Issue number2
DOIs
Publication statusPublished - 14 Jul 2003
Externally publishedYes

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

  1. SDG 7 - Affordable and Clean Energy
    SDG 7 Affordable and Clean Energy

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