Effect of oxidation on electromigration in 2-µm Cu redistribution lines capped with polyimide

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • I-Hsin Tseng
  • Po-Ning Hsu
  • Wei-You Hsu
  • Dinh-Phuc Tran
  • Benson Tsu-Hung Lin
  • Chia-Cheng Chang
  • Chih Chen

Detail(s)

Original languageEnglish
Article number105048
Journal / PublicationResults in Physics
Volume31
Online published22 Nov 2021
Publication statusPublished - Dec 2021
Externally publishedYes

Link(s)

Abstract

Polyimide (PI) has been adopted to protect the Cu from oxidation in the packaging industry. Electromigration (EM) of Cu redistribution layers (RDLs) capped with PI was investigated at 160 °C under 1.0 × 106 A/cm2. The results indicated that failure of fine-pitched (2-µm) is different from that of 10-µm RDLs, which is void formation. The failure of the 2-µm RDLs is mainly caused by severe oxidation during EM. To analyze the EM failure of the Cu RDLs with different pitches, the oxidation area of nanotwinned copper (nt-Cu) and regular Cu RDLs during EM was compared. We propose an oxidation equation to estimate the resistance increase of RDLs with various widths.

Research Area(s)

  • Electromigration, Fine pitch, Nanotwinned copper, Oxidation, Redistribution layers

Citation Format(s)

Effect of oxidation on electromigration in 2-µm Cu redistribution lines capped with polyimide. / Tseng, I-Hsin; Hsu, Po-Ning; Hsu, Wei-You et al.
In: Results in Physics, Vol. 31, 105048, 12.2021.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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