Effect of oxidation on electromigration in 2-µm Cu redistribution lines capped with polyimide

I-Hsin Tseng; Po-Ning Hsu; Wei-You Hsu; Dinh-Phuc Tran; Benson Tsu-Hung Lin; Chia-Cheng Chang; K.N. Tu; Chih Chen

doi:10.1016/j.rinp.2021.105048

Effect of oxidation on electromigration in 2-µm Cu redistribution lines capped with polyimide

I-Hsin Tseng
, Po-Ning Hsu
, Wei-You Hsu
, Dinh-Phuc Tran
, Benson Tsu-Hung Lin
, Chia-Cheng Chang
, K.N. Tu
, Chih Chen^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

30 Citations (Scopus)

78 Downloads (CityUHK Scholars)

Abstract

Polyimide (PI) has been adopted to protect the Cu from oxidation in the packaging industry. Electromigration (EM) of Cu redistribution layers (RDLs) capped with PI was investigated at 160 °C under 1.0 × 10⁶ A/cm². The results indicated that failure of fine-pitched (2-µm) is different from that of 10-µm RDLs, which is void formation. The failure of the 2-µm RDLs is mainly caused by severe oxidation during EM. To analyze the EM failure of the Cu RDLs with different pitches, the oxidation area of nanotwinned copper (nt-Cu) and regular Cu RDLs during EM was compared. We propose an oxidation equation to estimate the resistance increase of RDLs with various widths.

Original language	English
Article number	105048
Journal	Results in Physics
Volume	31
Online published	22 Nov 2021
DOIs	https://doi.org/10.1016/j.rinp.2021.105048
Publication status	Published - Dec 2021
Externally published	Yes

Research Keywords

Electromigration
Fine pitch
Nanotwinned copper
Oxidation
Redistribution layers

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This full text is made available under CC-BY 4.0. https://creativecommons.org/licenses/by/4.0/

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@article{b254b723dab54907a5016f14e945a1f4,

title = "Effect of oxidation on electromigration in 2-µm Cu redistribution lines capped with polyimide",

abstract = "Polyimide (PI) has been adopted to protect the Cu from oxidation in the packaging industry. Electromigration (EM) of Cu redistribution layers (RDLs) capped with PI was investigated at 160 °C under 1.0 × 106 A/cm2. The results indicated that failure of fine-pitched (2-µm) is different from that of 10-µm RDLs, which is void formation. The failure of the 2-µm RDLs is mainly caused by severe oxidation during EM. To analyze the EM failure of the Cu RDLs with different pitches, the oxidation area of nanotwinned copper (nt-Cu) and regular Cu RDLs during EM was compared. We propose an oxidation equation to estimate the resistance increase of RDLs with various widths.",

keywords = "Electromigration, Fine pitch, Nanotwinned copper, Oxidation, Redistribution layers",

author = "I-Hsin Tseng and Po-Ning Hsu and Wei-You Hsu and Dinh-Phuc Tran and Lin, \{Benson Tsu-Hung\} and Chia-Cheng Chang and K.N. Tu and Chih Chen",

year = "2021",

month = dec,

doi = "10.1016/j.rinp.2021.105048",

language = "English",

volume = "31",

journal = "Results in Physics",

issn = "2211-3797",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Effect of oxidation on electromigration in 2-µm Cu redistribution lines capped with polyimide

AU - Tseng, I-Hsin

AU - Hsu, Po-Ning

AU - Hsu, Wei-You

AU - Tran, Dinh-Phuc

AU - Lin, Benson Tsu-Hung

AU - Chang, Chia-Cheng

AU - Tu, K.N.

AU - Chen, Chih

PY - 2021/12

Y1 - 2021/12

N2 - Polyimide (PI) has been adopted to protect the Cu from oxidation in the packaging industry. Electromigration (EM) of Cu redistribution layers (RDLs) capped with PI was investigated at 160 °C under 1.0 × 106 A/cm2. The results indicated that failure of fine-pitched (2-µm) is different from that of 10-µm RDLs, which is void formation. The failure of the 2-µm RDLs is mainly caused by severe oxidation during EM. To analyze the EM failure of the Cu RDLs with different pitches, the oxidation area of nanotwinned copper (nt-Cu) and regular Cu RDLs during EM was compared. We propose an oxidation equation to estimate the resistance increase of RDLs with various widths.

AB - Polyimide (PI) has been adopted to protect the Cu from oxidation in the packaging industry. Electromigration (EM) of Cu redistribution layers (RDLs) capped with PI was investigated at 160 °C under 1.0 × 106 A/cm2. The results indicated that failure of fine-pitched (2-µm) is different from that of 10-µm RDLs, which is void formation. The failure of the 2-µm RDLs is mainly caused by severe oxidation during EM. To analyze the EM failure of the Cu RDLs with different pitches, the oxidation area of nanotwinned copper (nt-Cu) and regular Cu RDLs during EM was compared. We propose an oxidation equation to estimate the resistance increase of RDLs with various widths.

KW - Electromigration

KW - Fine pitch

KW - Nanotwinned copper

KW - Oxidation

KW - Redistribution layers

UR - https://www.scopus.com/pages/publications/85119915948

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-85119915948&origin=recordpage

U2 - 10.1016/j.rinp.2021.105048

DO - 10.1016/j.rinp.2021.105048

M3 - RGC 21 - Publication in refereed journal

SN - 2211-3797

VL - 31

JO - Results in Physics

JF - Results in Physics

M1 - 105048

ER -

Effect of oxidation on electromigration in 2-µm Cu redistribution lines capped with polyimide

Abstract

Research Keywords

Publisher's Copyright Statement

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