Effect of nitrogen on the band structure of III-N-V alloys

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)22_Publication in policy or professional journal

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Author(s)

  • W. Shan
  • W. Walukiewicz
  • J. W. Ager III
  • E. E. Haller
  • J. F. Geisz
  • D. J. Friedman
  • J. M. Olson
  • Sarah R. Kurtz
  • H. P. Xin
  • C. W. Tu

Detail(s)

Original languageEnglish
Journal / PublicationProceedings of SPIE - The International Society for Optical Engineering
Volume3944
Publication statusPublished - 2000
Externally publishedYes

Conference

TitlePhysics and Simulation of Optoelectronic Devices VIII
CitySan Jose, CA, USA
Period24 - 28 January 2000

Abstract

Incorporation of a few percent of nitrogen into conventional III-V compounds to form III-N-V alloys such as GaNAs and GaNP leads to a large reduction of the fundamental band gap. We show experimentally and theoretically that the effect originates from an anti-crossing interaction between the extended conduction-band states and a narrow resonant band formed by localized N states. The interaction significantly alters the electronic band structure by splitting the conduction band into two nonparabolic subbands. The downward shift of the lower conduction subband edge is responsible for the N-induced reduction of the fundamental band-gap energy.

Citation Format(s)

Effect of nitrogen on the band structure of III-N-V alloys. / Shan, W.; Walukiewicz, W.; Yu, K. M.; Ager III, J. W.; Haller, E. E.; Geisz, J. F.; Friedman, D. J.; Olson, J. M.; Kurtz, Sarah R.; Xin, H. P.; Tu, C. W.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 3944, 2000.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)22_Publication in policy or professional journal