TY - JOUR
T1 - Effect of interface strength on electromigration-induced inlaid copper interconnect degradation
T2 - Experiment and simulation
AU - Zschech, Ehrenfried
AU - Engelmann, Hans-Jürgen
AU - Meyer, Moritz Andreas
AU - Kahlert, Volker
AU - Vairagar, Anand V.
AU - Mhaisalkar, Subodh G.
AU - Krishnamoorthy, Ahila
AU - Yan, Minyu
AU - Tu, K. N.
AU - Sukharev, Valeriy
N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].
PY - 2005/9
Y1 - 2005/9
N2 - Both in situ microscopy experiments at embedded inlaid copper interconnect structures and numerical simulations based on a physical model provide information about electromigration-induced degradation mechanisms in on-chip interconnects. It is shown that the modification of the bonding strength of the weakest interface results in completely changed degradation and failure mechanisms. Transmission electron microscopy (TEM) images of standard Cu/SiNx interfaces are compared with strengthened interfaces, e.g., after applying an additional metal coating or a self-as-sembled monolayer (SAM) on top of the polished copper lines. The changed degradation mechanisms as observed with the in situ scanning electron microscopy (SEM) experiment and as predicted based on the numerical simulations are explained based on TEM images. © Carl Hanser Verlag, München.
AB - Both in situ microscopy experiments at embedded inlaid copper interconnect structures and numerical simulations based on a physical model provide information about electromigration-induced degradation mechanisms in on-chip interconnects. It is shown that the modification of the bonding strength of the weakest interface results in completely changed degradation and failure mechanisms. Transmission electron microscopy (TEM) images of standard Cu/SiNx interfaces are compared with strengthened interfaces, e.g., after applying an additional metal coating or a self-as-sembled monolayer (SAM) on top of the polished copper lines. The changed degradation mechanisms as observed with the in situ scanning electron microscopy (SEM) experiment and as predicted based on the numerical simulations are explained based on TEM images. © Carl Hanser Verlag, München.
KW - Electromigration
KW - Interface
KW - Microstructure
UR - http://www.scopus.com/inward/record.url?scp=27144508419&partnerID=8YFLogxK
UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-27144508419&origin=recordpage
U2 - 10.1515/ijmr-2005-0169
DO - 10.1515/ijmr-2005-0169
M3 - RGC 21 - Publication in refereed journal
SN - 0044-3093
VL - 96
SP - 966
EP - 971
JO - Zeitschrift für Metallkunde/Materials Research and Advanced Techniques
JF - Zeitschrift für Metallkunde/Materials Research and Advanced Techniques
IS - 9
ER -