Effect of interdiffusion on the subbands in an In0.65Gs0.35As/GaAs multiple-quantum well structure on GaAs substrate at 1.55μm operation wavelength

M. C Y Chan; E. Herbert Li; K. S. Chan

Effect of interdiffusion on the subbands in an In0.65Gs0.35As/GaAs multiple-quantum well structure on GaAs substrate at 1.55μm operation wavelength

Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 22_Publication in policy or professional journal

Overview

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Author(s)

M. C Y Chan
E. Herbert Li
K. S. Chan

Detail(s)

Original language	English
Pages (from-to)	283-288
Journal / Publication	Materials Research Society Symposium - Proceedings
Volume	417
Publication status	Published - 1996
Externally published	Yes

Conference

Title	1995 MRS Fall Meeting
Place	United States
City	Boston
Period	27 November - 1 December 1995

Link(s)

	Check@CityULib
Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-0029719759&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(370af43f-ac9d-4e17-bdf3-267198396fa6).html

Abstract

Analysis of high indium concentration in interdiffused In_0.65Gs_0.35As/GaAs multiple quantum well (MQW) structure on GaAs Substrate is being studied. This material can achieve operating wavelengths around 1.5μm for applications in fiber optics communications. The large lattice mismatch problem (over 4.5% in this study) can be solved by using a linearly-graded InGaAs buffer layer for reducing any dislocation between the adjacent layers. Interdiffusion in the MQW structure can modify the composition profile in order to tailor the optical absorption and refraction properties. Results show that this system can have promising device performance operates at around 1.55μm and which base on the more matured and reliable GaAs technology.