Effect of indium fluctuation on the photovoltaic characteristics of InGaN/GaN multiple quantum well solar cells

K. Y. Lai; G. J. Lin; Y.-L. Lai; Y. F. Chen; J. H. He

doi:10.1063/1.3327331

Effect of indium fluctuation on the photovoltaic characteristics of InGaN/GaN multiple quantum well solar cells

K. Y. Lai
, G. J. Lin
, Y.-L. Lai
, Y. F. Chen
, J. H. He^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

90 Citations (Scopus)

Abstract

Severe In fluctuation was observed in In_0.3Ga_0.7N/GaN multiple quantum well solar cells using scanning transmission electron microscopy and energy dispersive x-ray spectroscopy. The high In content and fluctuation lead to low fill factor (FF) of 30% and energy conversion efficiency (η) of 0.48% under the illumination of AM 1.5G. As the temperature was increased from 250 to 300 K, FF and η were substantially enhanced. This strong temperature-dependent enhancement is attributed to the additional contribution to the photocurrents by the thermally activated carriers, which are originally trapped in the shallow quantum wells resulting from the inhomogeneous In distribution.

Original language	English
Article number	081103
Journal	Applied Physics Letters
Volume	96
Issue number	8
Online published	22 Feb 2010
DOIs	https://doi.org/10.1063/1.3327331
Publication status	Published - 22 Feb 2010
Externally published	Yes

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@article{83452f1ee40643049c347d483bace4b1,

title = "Effect of indium fluctuation on the photovoltaic characteristics of InGaN/GaN multiple quantum well solar cells",

abstract = "Severe In fluctuation was observed in In0.3Ga0.7N/GaN multiple quantum well solar cells using scanning transmission electron microscopy and energy dispersive x-ray spectroscopy. The high In content and fluctuation lead to low fill factor (FF) of 30\% and energy conversion efficiency (η) of 0.48\% under the illumination of AM 1.5G. As the temperature was increased from 250 to 300 K, FF and η were substantially enhanced. This strong temperature-dependent enhancement is attributed to the additional contribution to the photocurrents by the thermally activated carriers, which are originally trapped in the shallow quantum wells resulting from the inhomogeneous In distribution.",

author = "Lai, \{K. Y.\} and Lin, \{G. J.\} and Y.-L. Lai and Chen, \{Y. F.\} and He, \{J. H.\}",

year = "2010",

month = feb,

day = "22",

doi = "10.1063/1.3327331",

language = "English",

volume = "96",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Effect of indium fluctuation on the photovoltaic characteristics of InGaN/GaN multiple quantum well solar cells

AU - Lai, K. Y.

AU - Lin, G. J.

AU - Lai, Y.-L.

AU - Chen, Y. F.

AU - He, J. H.

PY - 2010/2/22

Y1 - 2010/2/22

N2 - Severe In fluctuation was observed in In0.3Ga0.7N/GaN multiple quantum well solar cells using scanning transmission electron microscopy and energy dispersive x-ray spectroscopy. The high In content and fluctuation lead to low fill factor (FF) of 30% and energy conversion efficiency (η) of 0.48% under the illumination of AM 1.5G. As the temperature was increased from 250 to 300 K, FF and η were substantially enhanced. This strong temperature-dependent enhancement is attributed to the additional contribution to the photocurrents by the thermally activated carriers, which are originally trapped in the shallow quantum wells resulting from the inhomogeneous In distribution.

AB - Severe In fluctuation was observed in In0.3Ga0.7N/GaN multiple quantum well solar cells using scanning transmission electron microscopy and energy dispersive x-ray spectroscopy. The high In content and fluctuation lead to low fill factor (FF) of 30% and energy conversion efficiency (η) of 0.48% under the illumination of AM 1.5G. As the temperature was increased from 250 to 300 K, FF and η were substantially enhanced. This strong temperature-dependent enhancement is attributed to the additional contribution to the photocurrents by the thermally activated carriers, which are originally trapped in the shallow quantum wells resulting from the inhomogeneous In distribution.

UR - https://www.scopus.com/pages/publications/77749246078

UR - https://www.scopus.com/pages/publications/77749246078#tab=impact

U2 - 10.1063/1.3327331

DO - 10.1063/1.3327331

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 081103

ER -

Effect of indium fluctuation on the photovoltaic characteristics of InGaN/GaN multiple quantum well solar cells

Abstract

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