Effect of electromigration in the anodic Al interconnect on melting of flip chip solder joints

Fan-Yi Ouyang; K. N. Tu; Chin-Li Kao; Yi-Shao Lai

doi:10.1063/1.2743395

Effect of electromigration in the anodic Al interconnect on melting of flip chip solder joints

Fan-Yi Ouyang, K. N. Tu, Chin-Li Kao, Yi-Shao Lai

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

24 Citations (Scopus)

Abstract

Melting of eutectic SnPb flip chip solder joints has been observed to occur frequently in dc electromigration tested with current density above 1.5× 104 A cm2 at an ambient temperature of 100 °C. It has been found that it is not due to the Joule heating of the solder bump itself, but rather due to the Joule heating of the on-chip Al interconnects. The current density in the Al approaches 2× 106 A cm2 and electromigration has especially generated voids at the anode of the Al. The damage has greatly increased the resistance of the Al, which produces the heat needed to melt the solder joint. The results of electrothermal coupling analysis show that when the resistance of the Al line changed threefold, the solder bump melted. © 2007 American Institute of Physics.

Original language	English
Article number	211914
Journal	Applied Physics Letters
Volume	90
Issue number	21
DOIs	https://doi.org/10.1063/1.2743395
Publication status	Published - 2007
Externally published	Yes

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

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title = "Effect of electromigration in the anodic Al interconnect on melting of flip chip solder joints",

abstract = "Melting of eutectic SnPb flip chip solder joints has been observed to occur frequently in dc electromigration tested with current density above 1.5× 104 A cm2 at an ambient temperature of 100 °C. It has been found that it is not due to the Joule heating of the solder bump itself, but rather due to the Joule heating of the on-chip Al interconnects. The current density in the Al approaches 2× 106 A cm2 and electromigration has especially generated voids at the anode of the Al. The damage has greatly increased the resistance of the Al, which produces the heat needed to melt the solder joint. The results of electrothermal coupling analysis show that when the resistance of the Al line changed threefold, the solder bump melted. {\textcopyright} 2007 American Institute of Physics.",

author = "Fan-Yi Ouyang and Tu, {K. N.} and Chin-Li Kao and Yi-Shao Lai",

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doi = "10.1063/1.2743395",

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volume = "90",

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issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Effect of electromigration in the anodic Al interconnect on melting of flip chip solder joints

AU - Ouyang, Fan-Yi

AU - Tu, K. N.

AU - Kao, Chin-Li

AU - Lai, Yi-Shao

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 2007

Y1 - 2007

N2 - Melting of eutectic SnPb flip chip solder joints has been observed to occur frequently in dc electromigration tested with current density above 1.5× 104 A cm2 at an ambient temperature of 100 °C. It has been found that it is not due to the Joule heating of the solder bump itself, but rather due to the Joule heating of the on-chip Al interconnects. The current density in the Al approaches 2× 106 A cm2 and electromigration has especially generated voids at the anode of the Al. The damage has greatly increased the resistance of the Al, which produces the heat needed to melt the solder joint. The results of electrothermal coupling analysis show that when the resistance of the Al line changed threefold, the solder bump melted. © 2007 American Institute of Physics.

AB - Melting of eutectic SnPb flip chip solder joints has been observed to occur frequently in dc electromigration tested with current density above 1.5× 104 A cm2 at an ambient temperature of 100 °C. It has been found that it is not due to the Joule heating of the solder bump itself, but rather due to the Joule heating of the on-chip Al interconnects. The current density in the Al approaches 2× 106 A cm2 and electromigration has especially generated voids at the anode of the Al. The damage has greatly increased the resistance of the Al, which produces the heat needed to melt the solder joint. The results of electrothermal coupling analysis show that when the resistance of the Al line changed threefold, the solder bump melted. © 2007 American Institute of Physics.

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U2 - 10.1063/1.2743395

DO - 10.1063/1.2743395

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

M1 - 211914

ER -

Effect of electromigration in the anodic Al interconnect on melting of flip chip solder joints

Abstract

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