Effect of electric field on metal induced lateral crystallization of amorphous silicon

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Shivani Singla
  • M. C. Poon
  • M. Chan
  • M. Qin
  • W. Y. Chan
  • C. Y. Yuen
  • P. K. Ko

Related Research Unit(s)

Detail(s)

Original languageEnglish
Article numberO8.5
Journal / PublicationMaterials Research Society Symposium - Proceedings
Volume587
Publication statusPublished - 1999

Conference

TitleSubstrate Engineering - Paving the Way to Epitaxy
PlaceUnited States
CityBoston
Period29 November - 3 December 1999

Abstract

The effects of electric field on the rate of metal induced lateral crystallization (MILC) of amorphous silicon were investigated. Nickel silicide, which is known to be a key species for the low temperature crystallization, was driven by an electric field. As a result, the crystallization velocity of EMILC was much faster than that of conventional MILC methods. Directional crystallization of amorphous silicon thin film was successfully achieved by applying a DC field during heat treatment. The crystallization was performed at different temperatures (500-625 °C) by employing a thin layer of nickel (30A°). The directionality of the resulting crystallization depended on the polarity of the electric field. The lateral crystallization velocity was three to four times faster than MILC when an electric field of 53.5 V/cm was applied.

Citation Format(s)

Effect of electric field on metal induced lateral crystallization of amorphous silicon. / Singla, Shivani; Poon, M. C.; Chan, M. et al.
In: Materials Research Society Symposium - Proceedings, Vol. 587, O8.5, 1999.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review