Effect of electric field on metal induced lateral crystallization of amorphous silicon

Shivani Singla; M. C. Poon; M. Chan; M. Qin; W. Y. Chan; C. Y. Yuen; P. K. Ko; H. Wong

doi:10.1557/proc-587-o8.5

Author(s)

Shivani Singla
M. C. Poon
M. Chan
M. Qin
W. Y. Chan
C. Y. Yuen
P. K. Ko

Related Research Unit(s)

Department of Electrical Engineering

Detail(s)

Original language	English
Article number	O8.5
Journal / Publication	Materials Research Society Symposium - Proceedings
Volume	587
Publication status	Published - 1999

Conference

Title	Substrate Engineering - Paving the Way to Epitaxy
Place	United States
City	Boston
Period	29 November - 3 December 1999

Link(s)

DOI	DOI https://doi.org/10.1557/proc-587-o8.5 Final Published version
	Check@CityULib
Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-0034512729&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(1605c709-a7fe-455d-9d60-de8e62ff9be3).html

Abstract

The effects of electric field on the rate of metal induced lateral crystallization (MILC) of amorphous silicon were investigated. Nickel silicide, which is known to be a key species for the low temperature crystallization, was driven by an electric field. As a result, the crystallization velocity of EMILC was much faster than that of conventional MILC methods. Directional crystallization of amorphous silicon thin film was successfully achieved by applying a DC field during heat treatment. The crystallization was performed at different temperatures (500-625 °C) by employing a thin layer of nickel (30A°). The directionality of the resulting crystallization depended on the polarity of the electric field. The lateral crystallization velocity was three to four times faster than MILC when an electric field of 53.5 V/cm was applied.

Citation Format(s)

[ RIS ] [ BibTeX ]

Effect of electric field on metal induced lateral crystallization of amorphous silicon. / Singla, Shivani; Poon, M. C.; Chan, M. et al.
In: Materials Research Society Symposium - Proceedings, Vol. 587, O8.5, 1999.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Singla, S, Poon, MC, Chan, M, Qin, M, Chan, WY, Yuen, CY, Ko, PK & Wong, H 1999, 'Effect of electric field on metal induced lateral crystallization of amorphous silicon', Materials Research Society Symposium - Proceedings, vol. 587, O8.5. https://doi.org/10.1557/proc-587-o8.5

Singla, S., Poon, M. C., Chan, M., Qin, M., Chan, W. Y., Yuen, C. Y., Ko, P. K., & Wong, H. (1999). Effect of electric field on metal induced lateral crystallization of amorphous silicon. Materials Research Society Symposium - Proceedings, 587, Article O8.5. https://doi.org/10.1557/proc-587-o8.5

Singla S, Poon MC, Chan M, Qin M, Chan WY, Yuen CY et al. Effect of electric field on metal induced lateral crystallization of amorphous silicon. Materials Research Society Symposium - Proceedings. 1999;587:O8.5. doi: 10.1557/proc-587-o8.5

Singla, Shivani ; Poon, M. C. ; Chan, M. et al. / Effect of electric field on metal induced lateral crystallization of amorphous silicon. In: Materials Research Society Symposium - Proceedings. 1999 ; Vol. 587.