Effect of deposition rate on the morphology, chemistry and electroluminescence of tris-(8-hydroxyqiunoline) aluminum films

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • L. F. Cheng
  • L. S. Liao
  • W. Y. Lai
  • X. H. Sun
  • N. B. Wong
  • S. T. Lee

Detail(s)

Original languageEnglish
Pages (from-to)418-422
Journal / PublicationChemical Physics Letters
Volume319
Issue number3-4
Online published17 Mar 2000
Publication statusPublished - 17 Mar 2000

Abstract

The effect of Alq3 deposition rate on the performance of the devices has been investigated by using the organic light-emitting diodes of indium-tin-oxide/N,N′-bis-(1-naphthyl)-N,′-diphenyl-1,1′- biphenyl-4,4′-diamine/tris-(8-hydroxyquinoline) aluminum (Alq3)/Mg:Ag. When the Alq3 deposition rate decreased from about 1.33 to 0.05 Å/s, the luminance efficiency of the devices decreased from 4.75 to 2.0 cd/A. Atomic force microscopy observations showed that Alq3 films prepared at the deposition rates of 1.33, 0.05, and 0.01 Å/s had a root-mean-square roughness of 12.0, 32.0, and 36.6 Å, respectively. X-ray photoelectron spectroscopy measurements showed that as Alq3 deposition rate decreased from 1.33 to 0.01 Å/s, the film contained more N-containing species. These changes in film morphology and chemistry are suspected to be responsible for the change in the electroluminescent performance of the devices.

Citation Format(s)

Effect of deposition rate on the morphology, chemistry and electroluminescence of tris-(8-hydroxyqiunoline) aluminum films. / Cheng, L. F.; Liao, L. S.; Lai, W. Y.; Sun, X. H.; Wong, N. B.; Lee, C. S.; Lee, S. T.

In: Chemical Physics Letters, Vol. 319, No. 3-4, 17.03.2000, p. 418-422.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review