Effect of dc negative-bias and silicon introduction on performance of Si-B-N composite film by RF-PECD technique

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review

3 Scopus Citations
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Author(s)

  • Meng Hua
  • Yu Xiang
  • Yu Junfeng
  • Wang Chengbiao

Detail(s)

Original languageEnglish
Pages (from-to)45-50
Journal / PublicationApplied Surface Science
Volume245
Issue number1-4
Publication statusPublished - 30 May 2005

Abstract

Under action of different dc negative-bias voltages on samples incorporating with silicon, a series of Si-B-N composite films were synthesized on steel 1045 using RF-PECVD technique (radio-frequency plasma enhanced chemical vapor deposition), and the surface analysis of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and etc. were followed. The experimental results showed: Si-B-N composite films had an obvious mixture phase of c-BN and h-BN crystal at a certain dc negative bias, and the film's mechanical performances including micro-hardness and adhesion were improved. Moreover, bias effect on deposition performance of Si-B-N composite film has been systematically investigated, and silicon introduction was found to be necessary for the growth of Si-B-N film and the improvement of adhesion. © 2004 Elsevier B.V. All rights reserved.

Research Area(s)

  • c-BN formation, dc negative-bias, Si-B-N composite film, Silicon introduction