TY - JOUR
T1 - Effect of current crowding on whisker growth at the anode in flip chip solder joints
AU - Ouyang, Fan-Yi
AU - Chen, Kai
AU - Tu, K. N.
AU - Lai, Yi-Shao
N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].
PY - 2007
Y1 - 2007
N2 - Owing to the line-to-bump configuration in flip chip solder joints, current crowding occurs when electrons enter into or exit from the solder bump. At the cathode contact, where electrons enter into the bump, current crowding induced pancake-type void formation has now been observed widely. At the anode contact, where electrons exit from the bump, we report here that whisker is formed. Results of both eutectic SnPb and SnAgCu solder joints are presented and compared. The cross-sectioned surface in SnPb showed dimple and bulge after electromigration, while that of SnAgCu remained flat. The difference is due to a larger back stress in the SnAgCu, consequently, electromigration in SnAgCu is slower than that in SnPb. Nanoindentation markers were used to measure the combined atomic fluxes of back stress and electromigration. © 2007 American Institute of Physics.
AB - Owing to the line-to-bump configuration in flip chip solder joints, current crowding occurs when electrons enter into or exit from the solder bump. At the cathode contact, where electrons enter into the bump, current crowding induced pancake-type void formation has now been observed widely. At the anode contact, where electrons exit from the bump, we report here that whisker is formed. Results of both eutectic SnPb and SnAgCu solder joints are presented and compared. The cross-sectioned surface in SnPb showed dimple and bulge after electromigration, while that of SnAgCu remained flat. The difference is due to a larger back stress in the SnAgCu, consequently, electromigration in SnAgCu is slower than that in SnPb. Nanoindentation markers were used to measure the combined atomic fluxes of back stress and electromigration. © 2007 American Institute of Physics.
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U2 - 10.1063/1.2822446
DO - 10.1063/1.2822446
M3 - RGC 21 - Publication in refereed journal
SN - 0003-6951
VL - 91
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 23
M1 - 231919
ER -