TY - JOUR
T1 - Effect of current crowding on vacancy diffusion and void formation in electromigration
AU - Tu, K. N.
AU - Yeh, C. C.
AU - Liu, C. Y.
AU - Chen, Chih
N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].
PY - 2000/2/21
Y1 - 2000/2/21
N2 - In multilevel interconnects, current crowding occurs whenever the current changes direction, such as when passing through a via. We propose that in current crowding, the current-density gradient can exert a driving force strong enough to cause excess vacancies (point defects) to migrate from high to low current-density regions. This leads to void formation in the latter. This is a key feature of electromigration-induced damage in very large scale integrated interconnects. © 2000 American Institute of Physics.
AB - In multilevel interconnects, current crowding occurs whenever the current changes direction, such as when passing through a via. We propose that in current crowding, the current-density gradient can exert a driving force strong enough to cause excess vacancies (point defects) to migrate from high to low current-density regions. This leads to void formation in the latter. This is a key feature of electromigration-induced damage in very large scale integrated interconnects. © 2000 American Institute of Physics.
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U2 - 10.1063/1.125915
DO - 10.1063/1.125915
M3 - RGC 21 - Publication in refereed journal
SN - 0003-6951
VL - 76
SP - 988
EP - 990
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 8
ER -