Effect of current crowding on contact failure in heavily doped n+- and p+-silicon-on-insulator

J. S. Huang; Chih Chen; C. C. Yeh; K. N. Tu; T. L. Shofner; J. L. Drown; R. B. Irwin; C. B. Vartuli

doi:10.1557/JMR.2000.0343

Effect of current crowding on contact failure in heavily doped n⁺- and p⁺-silicon-on-insulator

J. S. Huang
, Chih Chen
, C. C. Yeh
, K. N. Tu
, T. L. Shofner
, J. L. Drown
, R. B. Irwin
, C. B. Vartuli

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

6 Citations (Scopus)

Abstract

Stability of submicron contacts under high current density has been an outstanding reliability issue in advanced Si devices. Polarity effect of failure was observed in Ni and Ni₂Si contacts on n⁺-Si and p⁺-Si. In this report, we studied the failure due to high current density in contacts to n⁺- and p⁺-silicon-on-insulator (SOI). We found similar polarity effects below certain current: the p⁺-SOI failed preferentially at the cathode, while the n⁺-SOI failed preferentially at the anode. At higher current, damage occurred at both contacts. The effect of current crowding was evident in both cases.

Original language	English
Pages (from-to)	2387-2392
Journal	Journal of Materials Research
Volume	15
Issue number	11
DOIs	https://doi.org/10.1557/JMR.2000.0343
Publication status	Published - Nov 2000
Externally published	Yes

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

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@article{78981f515a1b472dac1c73f4e8ef4a30,

title = "Effect of current crowding on contact failure in heavily doped n+- and p+-silicon-on-insulator",

abstract = "Stability of submicron contacts under high current density has been an outstanding reliability issue in advanced Si devices. Polarity effect of failure was observed in Ni and Ni2Si contacts on n+-Si and p+-Si. In this report, we studied the failure due to high current density in contacts to n+- and p+-silicon-on-insulator (SOI). We found similar polarity effects below certain current: the p+-SOI failed preferentially at the cathode, while the n+-SOI failed preferentially at the anode. At higher current, damage occurred at both contacts. The effect of current crowding was evident in both cases.",

author = "Huang, \{J. S.\} and Chih Chen and Yeh, \{C. C.\} and Tu, \{K. N.\} and Shofner, \{T. L.\} and Drown, \{J. L.\} and Irwin, \{R. B.\} and Vartuli, \{C. B.\}",

note = "Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].",

year = "2000",

month = nov,

doi = "10.1557/JMR.2000.0343",

language = "English",

volume = "15",

pages = "2387--2392",

journal = "Journal of Materials Research",

issn = "0884-2914",

publisher = "Springer International Publishing ",

number = "11",

}

TY - JOUR

T1 - Effect of current crowding on contact failure in heavily doped n+- and p+-silicon-on-insulator

AU - Huang, J. S.

AU - Chen, Chih

AU - Yeh, C. C.

AU - Tu, K. N.

AU - Shofner, T. L.

AU - Drown, J. L.

AU - Irwin, R. B.

AU - Vartuli, C. B.

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 2000/11

Y1 - 2000/11

N2 - Stability of submicron contacts under high current density has been an outstanding reliability issue in advanced Si devices. Polarity effect of failure was observed in Ni and Ni2Si contacts on n+-Si and p+-Si. In this report, we studied the failure due to high current density in contacts to n+- and p+-silicon-on-insulator (SOI). We found similar polarity effects below certain current: the p+-SOI failed preferentially at the cathode, while the n+-SOI failed preferentially at the anode. At higher current, damage occurred at both contacts. The effect of current crowding was evident in both cases.

AB - Stability of submicron contacts under high current density has been an outstanding reliability issue in advanced Si devices. Polarity effect of failure was observed in Ni and Ni2Si contacts on n+-Si and p+-Si. In this report, we studied the failure due to high current density in contacts to n+- and p+-silicon-on-insulator (SOI). We found similar polarity effects below certain current: the p+-SOI failed preferentially at the cathode, while the n+-SOI failed preferentially at the anode. At higher current, damage occurred at both contacts. The effect of current crowding was evident in both cases.

UR - https://www.scopus.com/pages/publications/0034333904

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0034333904&origin=recordpage

U2 - 10.1557/JMR.2000.0343

DO - 10.1557/JMR.2000.0343

M3 - RGC 21 - Publication in refereed journal

SN - 0884-2914

VL - 15

SP - 2387

EP - 2392

JO - Journal of Materials Research

JF - Journal of Materials Research

IS - 11

ER -