EFFECT OF CHAMBER CONFIGURATION AND BIAS VOLTAGE ON DAMAGE INDUCED IN Si BY REACTIVE ION ETCHING.

S. W. Pang; C. M. Horwitz; D. D. Rathman; S. M. Cabral; D. J. Silversmith; R. W. Mountain

EFFECT OF CHAMBER CONFIGURATION AND BIAS VOLTAGE ON DAMAGE INDUCED IN Si BY REACTIVE ION ETCHING.

S. W. Pang
, C. M. Horwitz
, D. D. Rathman
, S. M. Cabral
, D. J. Silversmith
, R. W. Mountain

City University of Hong Kong

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

7 Citations (Scopus)

Original language	English
Title of host publication	Proceedings - The Electrochemical Society
Publisher	Electrochemical Soc Inc
Pages	84-92
Volume	83-10
Publication status	Published - 1983

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Volume	83-10

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@inproceedings{2d79bc961eac4088a387fafe142a087d,

title = "EFFECT OF CHAMBER CONFIGURATION AND BIAS VOLTAGE ON DAMAGE INDUCED IN Si BY REACTIVE ION ETCHING.",

author = "Pang, \{S. W.\} and Horwitz, \{C. M.\} and Rathman, \{D. D.\} and Cabral, \{S. M.\} and Silversmith, \{D. J.\} and Mountain, \{R. W.\}",

year = "1983",

language = "English",

volume = "83-10",

publisher = "Electrochemical Soc Inc",

pages = "84--92",

booktitle = "Proceedings - The Electrochemical Society",

}

EFFECT OF CHAMBER CONFIGURATION AND BIAS VOLTAGE ON DAMAGE INDUCED IN Si BY REACTIVE ION ETCHING. / Pang, S. W.; Horwitz, C. M.; Rathman, D. D. et al.
Proceedings - The Electrochemical Society. Vol. 83-10 Electrochemical Soc Inc, 1983. p. 84-92.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - EFFECT OF CHAMBER CONFIGURATION AND BIAS VOLTAGE ON DAMAGE INDUCED IN Si BY REACTIVE ION ETCHING.

AU - Pang, S. W.

AU - Horwitz, C. M.

AU - Rathman, D. D.

AU - Cabral, S. M.

AU - Silversmith, D. J.

AU - Mountain, R. W.

PY - 1983

Y1 - 1983

UR - https://www.scopus.com/pages/publications/0020914651

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0020914651&origin=recordpage

M3 - RGC 32 - Refereed conference paper (with host publication)

VL - 83-10

SP - 84

EP - 92

BT - Proceedings - The Electrochemical Society

PB - Electrochemical Soc Inc

ER -

EFFECT OF CHAMBER CONFIGURATION AND BIAS VOLTAGE ON DAMAGE INDUCED IN Si BY REACTIVE ION ETCHING.

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