EFFECT OF CHAMBER CONFIGURATION AND BIAS VOLTAGE ON DAMAGE INDUCED IN Si BY REACTION ION ETCHING.

S. W. Pang, C. M. Horwitz, D. D. Rathman, S. M. Cabral, D. J. Silversmith, R. W. Mountain

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Original language	English
Pages (from-to)	278-279
Journal	Electrochemical Society Extended Abstracts
Volume	83-1
Publication status	Published - 1983
Externally published	Yes
Event	Extended Abstracts, Spring Meeting - Electrochemical Society 1983. - San Francisco, CA, United States Duration: 8 May 1983 → 13 May 1983

Other Access Options

@article{027ee10eaee14db4be80b3a2a0ddbdce,

title = "EFFECT OF CHAMBER CONFIGURATION AND BIAS VOLTAGE ON DAMAGE INDUCED IN Si BY REACTION ION ETCHING.",

author = "Pang, {S. W.} and Horwitz, {C. M.} and Rathman, {D. D.} and Cabral, {S. M.} and Silversmith, {D. J.} and Mountain, {R. W.}",

year = "1983",

language = "English",

volume = "83-1",

pages = "278--279",

journal = "Electrochemical Society Extended Abstracts",

issn = "0160-4619",

note = "Extended Abstracts, Spring Meeting - Electrochemical Society 1983. ; Conference date: 08-05-1983 Through 13-05-1983",

}

TY - JOUR

T1 - EFFECT OF CHAMBER CONFIGURATION AND BIAS VOLTAGE ON DAMAGE INDUCED IN Si BY REACTION ION ETCHING.

AU - Pang, S. W.

AU - Horwitz, C. M.

AU - Rathman, D. D.

AU - Cabral, S. M.

AU - Silversmith, D. J.

AU - Mountain, R. W.

PY - 1983

Y1 - 1983

UR - http://www.scopus.com/inward/record.url?scp=0020980433&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0020980433&origin=recordpage

M3 - RGC 21 - Publication in refereed journal

SN - 0160-4619

VL - 83-1

SP - 278

EP - 279

JO - Electrochemical Society Extended Abstracts

JF - Electrochemical Society Extended Abstracts

T2 - Extended Abstracts, Spring Meeting - Electrochemical Society 1983.

Y2 - 8 May 1983 through 13 May 1983

ER -