Effect of B-complexes on lattice structure and electronic properties in heavily boron-doped diamond

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • Run Long
  • Ying Dai
  • Meng Guo
  • Lin Yu
  • Baibiao Huang

Detail(s)

Original languageEnglish
Pages (from-to)234-239
Journal / PublicationDiamond and Related Materials
Volume17
Issue number3
Publication statusPublished - Mar 2008

Abstract

On the basis of first-principle calculations for a series of B-doped supercells models, we confirmed that the lattice parameter increases with the boron concentration in a proximity linear relation. The electronic structure shows that the impurity band induced by B-complexes except B dimer mixes with valence band and the Fermi level locates in the valence band in heavily boron-doped diamond, which may well explain recent superconducting transition experimental findings. Our results indicate that the superconducting critical temperature TC is not only related to the B concentration, but also affected by the B configurations in diamond lattice. © 2007 Elsevier B.V. All rights reserved.

Research Area(s)

  • Boron-doped diamond, Critical temperature TC, Superconducting transition

Citation Format(s)

Effect of B-complexes on lattice structure and electronic properties in heavily boron-doped diamond. / Long, Run; Dai, Ying; Guo, Meng et al.
In: Diamond and Related Materials, Vol. 17, No. 3, 03.2008, p. 234-239.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review