Effect of band anticrossing on the optical transitions in GaAS1-xNx/GaAS multiple quantum wells

J. Wu; W. Shan; W. Walukiewicz; K. M. Yu; J. W. Ager III; E. E. Haller; H. P. Xin; C. W. Tu

doi:10.1103/PhysRevB.64.085320

Effect of band anticrossing on the optical transitions in GaAS_1-xN_x/GaAS multiple quantum wells

J. Wu^*, W. Shan, W. Walukiewicz, K. M. Yu, J. W. Ager III, E. E. Haller, H. P. Xin, C. W. Tu

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 22 - Publication in policy or professional journal

95 Citations (Scopus)

Abstract

Interband transitions in GaAs_1-xN_x/GaAs multiple quantum wells were studied at room temperature by photomodulated reflectance spectroscopy as a function of well width (3-9 nm), the nitrogen concentration (0.012<x<0.028), and hydrostatic pressure (0–64 kbar). All experimental data can be quantitatively explained using the dispersion relationship obtained from a band anticrossing model to calculate electron confinement effects in a finite depth quantum well. The results are consistent with a nitrogen-induced large increase of the electron effective mass in the GaAsN quantum wells.

Original language	English
Article number	085320
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	64
Issue number	8
DOIs	https://doi.org/10.1103/PhysRevB.64.085320
Publication status	Published - 15 Aug 2001
Externally published	Yes

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@article{d28754efec384881a4e8ba6d53c4fd2e,

title = "Effect of band anticrossing on the optical transitions in GaAS1-xNx/GaAS multiple quantum wells",

abstract = "Interband transitions in GaAs1-xNx/GaAs multiple quantum wells were studied at room temperature by photomodulated reflectance spectroscopy as a function of well width (3-9 nm), the nitrogen concentration (0.012<x<0.028), and hydrostatic pressure (0–64 kbar). All experimental data can be quantitatively explained using the dispersion relationship obtained from a band anticrossing model to calculate electron confinement effects in a finite depth quantum well. The results are consistent with a nitrogen-induced large increase of the electron effective mass in the GaAsN quantum wells.",

author = "J. Wu and W. Shan and W. Walukiewicz and Yu, {K. M.} and {Ager III}, {J. W.} and Haller, {E. E.} and Xin, {H. P.} and Tu, {C. W.}",

year = "2001",

month = aug,

day = "15",

doi = "10.1103/PhysRevB.64.085320",

language = "English",

volume = "64",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "0163-1829",

publisher = "American Physical Society",

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TY - JOUR

T1 - Effect of band anticrossing on the optical transitions in GaAS1-xNx/GaAS multiple quantum wells

AU - Wu, J.

AU - Shan, W.

AU - Walukiewicz, W.

AU - Yu, K. M.

AU - Ager III, J. W.

AU - Haller, E. E.

AU - Xin, H. P.

AU - Tu, C. W.

PY - 2001/8/15

Y1 - 2001/8/15

N2 - Interband transitions in GaAs1-xNx/GaAs multiple quantum wells were studied at room temperature by photomodulated reflectance spectroscopy as a function of well width (3-9 nm), the nitrogen concentration (0.012<x<0.028), and hydrostatic pressure (0–64 kbar). All experimental data can be quantitatively explained using the dispersion relationship obtained from a band anticrossing model to calculate electron confinement effects in a finite depth quantum well. The results are consistent with a nitrogen-induced large increase of the electron effective mass in the GaAsN quantum wells.

AB - Interband transitions in GaAs1-xNx/GaAs multiple quantum wells were studied at room temperature by photomodulated reflectance spectroscopy as a function of well width (3-9 nm), the nitrogen concentration (0.012<x<0.028), and hydrostatic pressure (0–64 kbar). All experimental data can be quantitatively explained using the dispersion relationship obtained from a band anticrossing model to calculate electron confinement effects in a finite depth quantum well. The results are consistent with a nitrogen-induced large increase of the electron effective mass in the GaAsN quantum wells.

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U2 - 10.1103/PhysRevB.64.085320

DO - 10.1103/PhysRevB.64.085320

M3 - RGC 22 - Publication in policy or professional journal

SN - 0163-1829

VL - 64

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

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ER -