Effect of band anticrossing on the optical transitions in GaAS_1-xN_x/GaAS multiple quantum wells

Interband transitions in GaAs_1-xN_x/GaAs multiple quantum wells were studied at room temperature by photomodulated reflectance spectroscopy as a function of well width (3-9 nm), the nitrogen concentration (0.012<x<0.028), and hydrostatic pressure (0–64 kbar). All experimental data can be quantitatively explained using the dispersion relationship obtained from a band anticrossing model to calculate electron confinement effects in a finite depth quantum well. The results are consistent with a nitrogen-induced large increase of the electron effective mass in the GaAsN quantum wells.