Effect of amorphous Si on the epitaxial growth of CoSi2 by Co/Si/Ti/Si solid state epitaxy

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Xin Ping Qu
  • Guo Ping Ru
  • Jian Hai Liu
  • Hong Xiang Mo
  • Jing Liu
  • Bing Zong Li

Detail(s)

Original languageEnglish
Pages (from-to)264-267
Journal / PublicationInternational Conference on Solid-State and Integrated Circuit Technology Proceedings
Publication statusPublished - 1998
Externally publishedYes

Conference

TitleProceedings of the 1998 5th International Conference on Solid-State and Integrated Circuit Technology
CityBeijing, China
Period21 - 23 October 1998

Abstract

An amorphous Si layer was added for the reduction of Si consumption in the ultra-shallow junctions during the silicide formation. The present experiments show an epitaxial CoSi2 layer with good single-crystalline quality was grown by Co/Si/Ti/Si(100) reaction. By varying the thickness of interposed amorphous Si, its effect on the epitaxial CoSi2 growth and self-aligned process was investigated. The film structure and crystallinity were characterized by X-ray diffraction (XRD), Rutherford backscattering(RBS)/channeling and transmission electron microscopy (TEM). RBS/C shows that the channeling yield minimum of CoSi2 formed by Co(15 nm)/Si(4 nm)/Si(3nm)/Si(100) reaction is 5.2%. It was also demonstrated that within a certain thickness range for the deposited Si, the self-aligned silicide (SALICIDE) contact structure can be formed by such a multilayer.

Citation Format(s)

Effect of amorphous Si on the epitaxial growth of CoSi2 by Co/Si/Ti/Si solid state epitaxy. / Qu, Xin Ping; Ru, Guo Ping; Liu, Jian Hai; Mo, Hong Xiang; Liu, Jing; Li, Bing Zong; Chu, Paul K.

In: International Conference on Solid-State and Integrated Circuit Technology Proceedings, 1998, p. 264-267.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review