Effect of a substrate on the phase transformations of amorphous TiSi2 thin films

R. D. Thompson; H. Takai; P. A. Psaras; K. N. Tu

doi:10.1063/1.338254

Effect of a substrate on the phase transformations of amorphous TiSi₂ thin films

Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

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Author(s)

R. D. Thompson
H. Takai
P. A. Psaras
K. N. Tu

Detail(s)

Original language	English
Pages (from-to)	540-544
Journal / Publication	Journal of Applied Physics
Volume	61
Issue number	2
Publication status	Published - 15 Jan 1987
Externally published	Yes

Link(s)

DOI	DOI https://doi.org/10.1063/1.338254 Final Published version
	Check@CityULib
Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-36549093246&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(2adef196-e4d1-428b-8f48-7c818f912612).html

Abstract

The crystallization of an amorphous TiSi₂ evaporated film has been studied on both poly-Si and SiO₂ substrates. A metastable form of TiSi₂ (base-centered orthorhombic; a=3.62 A, b=13.76 A, and c=3.605 A) [P. G. Cotter, J. H. Kohn, and R. A. Potter, J. Am. Ceram. Soc. 39, 11 (1956)] is formed first at a temperature of approximately 350 °C on both substrates. This phase consumes the entire amorphous layer before undergoing a polymorphic transformation to face-centered orthorhombic TiSi₂ (a=8.24 A, b=4.78 A, and c=8.54 A) [F. Laves and H. J. Wallbaum, Z. Kristallogr. 101, 78 (1979)] at 600 and 800 °C on poly-Si and SiO₂, respectively. These transformations were investigated using in situ resistivity, x-ray diffraction, and transmission electron microscopy. The room-temperature resistivities observed were 96 and 20 μΩ cm for the base-centered and face-centered TiSi₂, respectively. The enhanced polymorphic transformation on poly-Si over SiO₂ is explained by a lowering of surface energy barrier to nucleation.

Bibliographic Note

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Citation Format(s)

[ RIS ] [ BibTeX ]

Effect of a substrate on the phase transformations of amorphous TiSi₂ thin films. / Thompson, R. D.; Takai, H.; Psaras, P. A. et al.
In: Journal of Applied Physics, Vol. 61, No. 2, 15.01.1987, p. 540-544.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

Thompson, RD, Takai, H, Psaras, PA & Tu, KN 1987, 'Effect of a substrate on the phase transformations of amorphous TiSi₂ thin films', Journal of Applied Physics, vol. 61, no. 2, pp. 540-544. https://doi.org/10.1063/1.338254

Thompson, R. D., Takai, H., Psaras, P. A., & Tu, K. N. (1987). Effect of a substrate on the phase transformations of amorphous TiSi₂ thin films. Journal of Applied Physics, 61(2), 540-544. https://doi.org/10.1063/1.338254

Thompson RD, Takai H, Psaras PA, Tu KN. Effect of a substrate on the phase transformations of amorphous TiSi₂ thin films. Journal of Applied Physics. 1987 Jan 15;61(2):540-544. doi: 10.1063/1.338254

Thompson, R. D. ; Takai, H. ; Psaras, P. A. et al. / Effect of a substrate on the phase transformations of amorphous TiSi₂ thin films. In: Journal of Applied Physics. 1987 ; Vol. 61, No. 2. pp. 540-544.