TY - GEN
T1 - Effect of 3 wt.% Bi in Sn-Zn solder on the interfacial reactions with the Au/Ni metallization
AU - Sharif, Ahmed
AU - Chan, Y. C.
AU - Wu, B. Y.
PY - 2006
Y1 - 2006
N2 - The work presented in this paper focuses on the role of 3 wt% Bi in the base Sn-9%Zn solder on the shear strengths and the interfacial reactions with Au/Ni/Cu pad metallization in ball grid array (BGA) applications. Sn-Zn-Bi solders showed better results in terms of shear strength on liquid state annealing than Sn-Zn solders. Two failure modes, ball cut and interfacial intermetallics/pad separation are assessed for the different solders and reflow times. The consumption of Ni in the Sn-Zn solder was larger than that in the Bi-containing solder. By the addition of 3% Bi in the eutectic Sn-Zn solder, the formation of Ni-Zn compound is reduced which in turn increase the reliability of the solder joint to the higher extent.
AB - The work presented in this paper focuses on the role of 3 wt% Bi in the base Sn-9%Zn solder on the shear strengths and the interfacial reactions with Au/Ni/Cu pad metallization in ball grid array (BGA) applications. Sn-Zn-Bi solders showed better results in terms of shear strength on liquid state annealing than Sn-Zn solders. Two failure modes, ball cut and interfacial intermetallics/pad separation are assessed for the different solders and reflow times. The consumption of Ni in the Sn-Zn solder was larger than that in the Bi-containing solder. By the addition of 3% Bi in the eutectic Sn-Zn solder, the formation of Ni-Zn compound is reduced which in turn increase the reliability of the solder joint to the higher extent.
UR - https://www.scopus.com/pages/publications/50249160528
UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-50249160528&origin=recordpage
U2 - 10.1109/IEMT.2006.4456494
DO - 10.1109/IEMT.2006.4456494
M3 - RGC 32 - Refereed conference paper (with host publication)
SN - 142440729
SN - 9781424407293
SP - 456
EP - 461
BT - Proceedings of the IEEE/CPMT International Electronics Manufacturing Technology (IEMT) Symposium
T2 - 31st International Electronics Manufacturing Technology Conference, IEMT 2006
Y2 - 8 November 2006 through 10 November 2006
ER -