Dynamics of Double Locally Active Memristors-Based Neuron and its Circuit Implementation

Locally active memristor (LAM), which has an ability to amplify fluctuations, is a natural component for constructing artificial neuron circuits. This paper proposes a novel third-order neuron circuit by paralleling two LAMs and a capacitor. Firstly, two parallel LAMs are equivalently modeled as a second-order LAM to facilitate theoretical analysis. Regarding the third-order neuron, the parameter design and operating condition are obtained by calculating its small signal impedance functions poles or Jacobin matrixs eigenvalues. It is demonstrated that the neuron exhibits various neuromorphic behaviors, including periodic spiking, chaos and burst-number adaptation. Due to the two different LAMs, the proposed thirdorder system has multiple equilibrium points, leading to the generation of coexisting attractors. Interestingly, the generated chaotic attractor does not revolve around a single unstable equilibrium point, but is located between two unstable equilibrium points. Furthermore, the emergence of oscillating behaviors is dependent on the distance between the two unstable equilibrium points. Detailed theoretical and simulation analysis are presented to investigate the neuron dynamics and provide an explanation for the observed neuromorphic behaviors. Finally, physical circuit implementation of the neuron is constructed based on the memristor emulator, which also demonstrates the practicability of the proposed neuron model and the correctness of the theoretical analysis. © 2025 IEEE.