TY - JOUR
T1 - Dynamical imaging of nickel disilicide nucleation and step flow propagation in defect-engineered Si nanowire
AU - Tang, W.
AU - Picraux, S. T.
AU - Gusak, A. M.
AU - Tu, K. N.
AU - Dayeh, S. A.
N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].
PY - 2014
Y1 - 2014
N2 - The Ni silicides and Si metal-semiconductor contacts are a vital element in the state-of-the-art commercial transistor devices. The latest source/drain (S/D) engineering technology designs the S/D crystal structure (e.g. intentional incorporation of stacking faults) that strains the channel to enhance device performance. Understanding the role of structural alternation, or defects, in Si-Ni reaction is therefore important in achieving precise control of the contact formation process at an atomic scale. Here, we present a study of Si-Ni reaction by lattice-resolved in-situ transmission electron microscopy (TEM) and found that presence of defects in Si can fundamentally change the silicide nucleation mechanism and growth behavior.
AB - The Ni silicides and Si metal-semiconductor contacts are a vital element in the state-of-the-art commercial transistor devices. The latest source/drain (S/D) engineering technology designs the S/D crystal structure (e.g. intentional incorporation of stacking faults) that strains the channel to enhance device performance. Understanding the role of structural alternation, or defects, in Si-Ni reaction is therefore important in achieving precise control of the contact formation process at an atomic scale. Here, we present a study of Si-Ni reaction by lattice-resolved in-situ transmission electron microscopy (TEM) and found that presence of defects in Si can fundamentally change the silicide nucleation mechanism and growth behavior.
UR - http://www.scopus.com/inward/record.url?scp=84921298774&partnerID=8YFLogxK
UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84921298774&origin=recordpage
U2 - 10.1149/06408.0101ecst
DO - 10.1149/06408.0101ecst
M3 - RGC 21 - Publication in refereed journal
SN - 1938-5862
VL - 64
SP - 101
EP - 108
JO - ECS Transactions
JF - ECS Transactions
IS - 8
T2 - Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics 12 - 2014 ECS and SMEQ Joint International Meeting
Y2 - 5 October 2014 through 9 October 2014
ER -