Dynamical analysis of carrier concentration in inelastic resonant tunneling

K. S. Chan

doi:10.1063/1.1594827

Dynamical analysis of carrier concentration in inelastic resonant tunneling

K. S. Chan

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

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Abstract

A tight binding Hamiltonian was used to obtain an analytic expression for the buildup process in inelastic resonant tunneling. The buildup process was described by the summation of a number of oscillation terms guided by an exponential buildup envelope. The results show the presence of a nonexponential buildup process near the resonant peak, with a buildup rate faster than that of the exponential envelope.

Original language	English
Pages (from-to)	692-694
Journal	Applied Physics Letters
Volume	83
Issue number	4
DOIs	https://doi.org/10.1063/1.1594827
Publication status	Published - 28 Jul 2003

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title = "Dynamical analysis of carrier concentration in inelastic resonant tunneling",

abstract = "A tight binding Hamiltonian was used to obtain an analytic expression for the buildup process in inelastic resonant tunneling. The buildup process was described by the summation of a number of oscillation terms guided by an exponential buildup envelope. The results show the presence of a nonexponential buildup process near the resonant peak, with a buildup rate faster than that of the exponential envelope.",

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N2 - A tight binding Hamiltonian was used to obtain an analytic expression for the buildup process in inelastic resonant tunneling. The buildup process was described by the summation of a number of oscillation terms guided by an exponential buildup envelope. The results show the presence of a nonexponential buildup process near the resonant peak, with a buildup rate faster than that of the exponential envelope.

AB - A tight binding Hamiltonian was used to obtain an analytic expression for the buildup process in inelastic resonant tunneling. The buildup process was described by the summation of a number of oscillation terms guided by an exponential buildup envelope. The results show the presence of a nonexponential buildup process near the resonant peak, with a buildup rate faster than that of the exponential envelope.

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U2 - 10.1063/1.1594827

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M3 - RGC 21 - Publication in refereed journal

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VL - 83

SP - 692

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

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Dynamical analysis of carrier concentration in inelastic resonant tunneling

Abstract

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