Abstract
The optical nonlinear properties of the SiN/Sb/SiN thin film are investigated. Imaging results of the near-field intensity gradients showed the intensity of the focused spot through the glass/SiN(170 nm)/Sb(15 nm)/SiN(20 nm) sample included both propagating and evanescent field intensity. The surface plasmons of the Sb/SiN interface excited by the focused laser beam play an important role in the near-field optical recording of super resolution optical near-field structure. The focused spot sizes of the evanescent field intensity can be manipulated by the detecting sensitivity of photomultiplier tube, while the focused spot sizes of the propagating intensity remained the same for different sensitivity.
| Original language | English |
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| Title of host publication | Joint International Symposium on Optical Memory and Optical Optical Data Storage 1999 |
| Place of Publication | Bellingham, Washington |
| Publisher | SPIE-The International Society for Optical Engineering |
| Pages | 429-431 |
| ISBN (Print) | 0819434582 |
| Publication status | Published - Jul 1999 |
| Externally published | Yes |
| Event | 1999 Joint International Symposium on Optical Memory and Optical Optical Data Storage (ISOM/ODS'99) - Sheraton Kauai Resort, Koloa, United States Duration: 11 Jul 1999 → 15 Jul 1999 https://isom.jp/PDF/ISOMODS99.pdf |
Publication series
| Name | Proceedings of SPIE - The International Society for Optical Engineering |
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| Publisher | SPIE - International Society for Optical Engineering |
| Number | Supp. |
| Volume | 3864 |
| ISSN (Print) | 0277-786X |
Conference
| Conference | 1999 Joint International Symposium on Optical Memory and Optical Optical Data Storage (ISOM/ODS'99) |
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| Abbreviated title | Joint ISOM/ODS 1999 |
| Place | United States |
| City | Koloa |
| Period | 11/07/99 → 15/07/99 |
| Internet address |