Dynamic nitrogen and titanium plasma ion implantation/deposition at different bias voltages

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

Detail(s)

Original languageEnglish
Pages (from-to)139-144
Journal / PublicationThin Solid Films
Volume390
Issue number1-2
Publication statusPublished - 30 Jun 2001

Abstract

Titanium oxynitride films were prepared on AISI 304 stainless steel samples employing dual titanium and nitrogen plasmas in an immersion configuration. The vacuum arc source provided the titanium plasma and the nitrogen plasma was sustained by hot filament glow discharge. A 30 μs implantation duration and 270 μs titanium arc duration were used in our plasma ion implantation and deposition (PIID) process. The impact of the implantation voltages (8 kV, 16 kV and 23 kV) on the film was investigated. The treated samples were characterized using Auger electron spectroscopy (AES) and atomic force microscopy (AFM). Our results reveal that the thickness of the coating is not changed significantly by the applied voltage. However, the surface morphology varies substantially with the implantation voltage. The 8-kV sample shows the highest titanium content and a smooth island-shaped surface whereas the 23-kV sample features peaks with sharper edges. © 2001 Elsevier Science B.V.

Research Area(s)

  • Interfacial ion mixing, Plasma deposition, Plasma implantation, Titanium nitride

Citation Format(s)

Dynamic nitrogen and titanium plasma ion implantation/deposition at different bias voltages. / Tian, Xiubo; Wang, Langping; Zhang, Qingyu; Chu, Paul K.

In: Thin Solid Films, Vol. 390, No. 1-2, 30.06.2001, p. 139-144.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review