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Dynamic mixing deposition of niobium nitride films by cathodic arc plasma in ambient nitrogen

  • T. Zhang
  • , J. H. Song
  • , X. B. Tian
  • , P. K. Chu*
  • , I. G. Brown
  • *Corresponding author for this work

    Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

    Abstract

    The synthesis and properties of niobium nitride films using niobium cathodic arc plasma reactive deposition in a nitrogen atmosphere with and without energetic ion dynamic mixing was discussed. The nitrogen content was higher in the films deposited using energetic ion dynamic mixing at a maximum substrate temperature of 180°centigrate. The films deposited without energetic ion dynamic mixing was found to be smooth and continuous while those with energetic ion dynamic mixing exhibit delamination due to poor adhesion. The results showed that with energetic ion dynamic mixing, niobium nitride films could be fabricated at low substrate temperature using a niobium metal arc plasma source in a nitrogen immersion configuration.
    Original languageEnglish
    Pages (from-to)2048-2050
    JournalJournal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
    Volume19
    Issue number5
    DOIs
    Publication statusPublished - Sept 2001

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