Abstract
Dry etching techniques are needed for the fabrication of nanostructures used in high performance devices. Multiple requirements must be satisfied for dry etching since different factors influence etch characteristics. For nanostructures, especially when the aspect ratio is high, etch rate and profile could vary with the device dimensions and etch depth. However, this feature size dependent etch characteristics can be minimized with appropriate etch conditions. Monitoring during dry etching can be made using optical emission spectroscopy and mass spectrometry. By monitoring high signal-to-noise ratio, etching can be stopped within a few nm of the desired layer. Endpoint accuracy is dependent on surface smoothness and response time of the system.
| Original language | English |
|---|---|
| Title of host publication | Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest |
| Publisher | IEEE |
| Publication status | Published - 1997 |
| Externally published | Yes |
| Event | Proceedings of the 1997 Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim - Chiba, Jpn Duration: 14 Jul 1997 → 18 Jul 1997 |
Conference
| Conference | Proceedings of the 1997 Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim |
|---|---|
| City | Chiba, Jpn |
| Period | 14/07/97 → 18/07/97 |
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