DRY ETCHING INDUCED DAMAGE IN Si AND GaAs.
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal
|Journal / Publication||Solid State Technology|
|Publication status||Published - Apr 1984|
|Link to Scopus||https://www.scopus.com/record/display.uri?eid=2-s2.0-0021410988&origin=recordpage|
In this paper the effects of dry etching induced radiation damage and contamination on Si and GaAs are reviewed. Also, techniques for minimizing or removing damage are discussed.