DRY ETCHING INDUCED DAMAGE IN Si AND GaAs.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

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Author(s)

Detail(s)

Original languageEnglish
Pages (from-to)249-256
Journal / PublicationSolid State Technology
Volume27
Issue number4
Publication statusPublished - Apr 1984
Externally publishedYes

Abstract

In this paper the effects of dry etching induced radiation damage and contamination on Si and GaAs are reviewed. Also, techniques for minimizing or removing damage are discussed.

Citation Format(s)

DRY ETCHING INDUCED DAMAGE IN Si AND GaAs. / Pang, Stella W.

In: Solid State Technology, Vol. 27, No. 4, 04.1984, p. 249-256.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal