DOPING PROPERTIES OF THE ION-BEAM-SPUTTERED SiGe FILM

The ion-beam-sputtered polycrystalline SiGe film and its doping properties have been studied. Boron and phosphorus have been doped into the sputtered poly-SiGe film by ion implantation and diffusion. To activate the implanted impurities, both rapid thermal annealing and furnace annealing have been used. The electrical measurements show that boron and phosphorus can be doped into sputtered SiGe films and effectively activated by both ion implantation with post-annealing and diffusion. Hall mobilities as high as 31 cm²/V·s and 20 cm²/V·s have been obtained in B-diffused and P-diffused SiGe films, respectively. The x-ray diffraction spectra of the sputtered SiGe film show its typical polycrystalline structure with (111), (220) and (311) as the preferential orientations.