Doping of GaN1-xAsx with high As content

A. X. Levander; S. V. Novikov; Z. Liliental-Weber; R. dos Reis; O. D. Dubon; J. Wu; C. T. Foxon; K. M. Yu; W. Walukiewicz

doi:10.1063/1.3657779

Doping of GaN_1-xAs_x with high As content

A. X. Levander, S. V. Novikov, Z. Liliental-Weber, R. dos Reis, O. D. Dubon, J. Wu, C. T. Foxon, K. M. Yu^*, W. Walukiewicz

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

5 Citations (Scopus)

Abstract

Recent work has shown that GaN_1-xAs_x can be grown across the entire composition range by low temperature molecular beam epitaxy with intermediate compositions being amorphous, but control of the electrical properties through doping is critical for functionalizing this material. Here we report the bipolar doping of GaN_1-xAs_x with high As content to conductivities above 4 S/cm at room temperature using Mg or Te. The carrier type was confirmed by thermopower measurements. Doping requires an increase in Ga flux during growth resulting in a mixed phase material of polycrystalline GaAs:N embedded in amorphous GaN_1-xAs_x. © 2011 American Institute of Physics.

Original language	English
Article number	093702
Journal	Journal of Applied Physics
Volume	110
Issue number	9
DOIs	https://doi.org/10.1063/1.3657779
Publication status	Published - 1 Nov 2011
Externally published	Yes

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title = "Doping of GaN1-xAsx with high As content",

abstract = "Recent work has shown that GaN1-xAsx can be grown across the entire composition range by low temperature molecular beam epitaxy with intermediate compositions being amorphous, but control of the electrical properties through doping is critical for functionalizing this material. Here we report the bipolar doping of GaN1-xAsx with high As content to conductivities above 4 S/cm at room temperature using Mg or Te. The carrier type was confirmed by thermopower measurements. Doping requires an increase in Ga flux during growth resulting in a mixed phase material of polycrystalline GaAs:N embedded in amorphous GaN1-xAsx. {\textcopyright} 2011 American Institute of Physics.",

author = "Levander, {A. X.} and Novikov, {S. V.} and Z. Liliental-Weber and {dos Reis}, R. and Dubon, {O. D.} and J. Wu and Foxon, {C. T.} and Yu, {K. M.} and W. Walukiewicz",

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T1 - Doping of GaN1-xAsx with high As content

AU - Levander, A. X.

AU - Novikov, S. V.

AU - Liliental-Weber, Z.

AU - dos Reis, R.

AU - Dubon, O. D.

AU - Wu, J.

AU - Foxon, C. T.

AU - Yu, K. M.

AU - Walukiewicz, W.

PY - 2011/11/1

Y1 - 2011/11/1

N2 - Recent work has shown that GaN1-xAsx can be grown across the entire composition range by low temperature molecular beam epitaxy with intermediate compositions being amorphous, but control of the electrical properties through doping is critical for functionalizing this material. Here we report the bipolar doping of GaN1-xAsx with high As content to conductivities above 4 S/cm at room temperature using Mg or Te. The carrier type was confirmed by thermopower measurements. Doping requires an increase in Ga flux during growth resulting in a mixed phase material of polycrystalline GaAs:N embedded in amorphous GaN1-xAsx. © 2011 American Institute of Physics.

AB - Recent work has shown that GaN1-xAsx can be grown across the entire composition range by low temperature molecular beam epitaxy with intermediate compositions being amorphous, but control of the electrical properties through doping is critical for functionalizing this material. Here we report the bipolar doping of GaN1-xAsx with high As content to conductivities above 4 S/cm at room temperature using Mg or Te. The carrier type was confirmed by thermopower measurements. Doping requires an increase in Ga flux during growth resulting in a mixed phase material of polycrystalline GaAs:N embedded in amorphous GaN1-xAsx. © 2011 American Institute of Physics.

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DO - 10.1063/1.3657779

M3 - RGC 21 - Publication in refereed journal

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