Doping of GaN1-xAsx with high As content

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

4 Scopus Citations
View graph of relations

Author(s)

  • A. X. Levander
  • S. V. Novikov
  • Z. Liliental-Weber
  • R. Dos Reis
  • O. D. Dubon
  • J. Wu
  • C. T. Foxon
  • W. Walukiewicz

Detail(s)

Original languageEnglish
Article number93702
Journal / PublicationJournal of Applied Physics
Volume110
Issue number9
Publication statusPublished - 1 Nov 2011
Externally publishedYes

Abstract

Recent work has shown that GaN1-xAsx can be grown across the entire composition range by low temperature molecular beam epitaxy with intermediate compositions being amorphous, but control of the electrical properties through doping is critical for functionalizing this material. Here we report the bipolar doping of GaN1-xAsx with high As content to conductivities above 4 S/cm at room temperature using Mg or Te. The carrier type was confirmed by thermopower measurements. Doping requires an increase in Ga flux during growth resulting in a mixed phase material of polycrystalline GaAs:N embedded in amorphous GaN1-xAsx. © 2011 American Institute of Physics.

Citation Format(s)

Doping of GaN1-xAsx with high As content. / Levander, A. X.; Novikov, S. V.; Liliental-Weber, Z.; Dos Reis, R.; Dubon, O. D.; Wu, J.; Foxon, C. T.; Yu, K. M.; Walukiewicz, W.

In: Journal of Applied Physics, Vol. 110, No. 9, 93702, 01.11.2011.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal