Doping cuprous oxide with fluorine and its band gap narrowing

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

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Author(s)

  • Fan Ye
  • Jun-Jie Zeng
  • Xing-Min Cai
  • Xiao-Qiang Su
  • Bo Wang
  • Huan Wang
  • Xiao-Qing Tian
  • Jian-Wei Li
  • Dong-Ping Zhang
  • Ping Fan
  • Jun Zhang

Detail(s)

Original languageEnglish
Pages (from-to)64-69
Journal / PublicationJournal of Alloys and Compounds
Volume721
Online published27 May 2017
Publication statusPublished - 15 Oct 2017

Abstract

Phase-pure cuprous oxide (Cu2O) thin films doped with Fluorine (F) have been prepared under thermal diffusion at diffusion temperatures of 1123 K and 1223 K and it is found that higher diffusion temperature leads to larger grain size. F-doping slightly reduces the lattice constant and F-doped Cu2O thin films exhibit p-type semiconductor characteristics. The reduction of band gap occurs due to F-doping induced impurity band, because F-doped samples have larger Urbach tails than that of undoped samples. Theoretical calculation demonstrates that substitutional F-doping makes Cu2O almost metallic because the energy bands of F atoms enter the forbidden gap, and interstitial F-doping narrows the band gap because F atoms contribute to the valence bands. The doped F atoms are very possibly interstial and play the role of acceptors in Cu2O. Phase-pure Cu2O doped with F have smaller resistivity and larger hole concentration, implying potential application in solar cells.

Citation Format(s)

Doping cuprous oxide with fluorine and its band gap narrowing. / Ye, Fan; Zeng, Jun-Jie; Cai, Xing-Min; Su, Xiao-Qiang; Wang, Bo; Wang, Huan; Roy, V. A.L.; Tian, Xiao-Qing; Li, Jian-Wei; Zhang, Dong-Ping; Fan, Ping; Zhang, Jun.

In: Journal of Alloys and Compounds, Vol. 721, 15.10.2017, p. 64-69.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal