Abstract
The effect of P on the diffusivity of Ni and Si in Ni2Si has been studied by analyzing the growth kinetics of Ni2Si on P-doped and undoped polycrystalline Si films using W markers. The growth of Ni2Si during the reaction of Ni and the P-doped Si films is faster than that of Ni and the undoped Si films. Marker analysis showed that the dopant does not affect the activation energies of diffusion; rather it increases greatly the preexponential factor of the diffusion of Si. The dopant effect has been examined in terms of the correlation factor and the entropy factor. © 1988 The American Physical Society.
| Original language | English |
|---|---|
| Pages (from-to) | 8121-8130 |
| Journal | Physical Review B |
| Volume | 38 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 1988 |
| Externally published | Yes |
Bibliographical note
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