TY - JOUR
T1 - Dopant activation of heavily doped silicon-on-insulator by high density currents
AU - Chen, Chih
AU - Huang, J. S.
AU - Liao, C. N.
AU - Tu, K. N.
N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].
PY - 1999/8
Y1 - 1999/8
N2 - We have activated heavily boron-doped and arsenic-doped silicon-on-insulator (SOI) strips by applying electrical current. The SOI strips were implanted with 40 keV BF+2 or As+ at a dosage of 5 × 1015 ions/cm2. Without postimplantation annealing, these implanted SOI strips can be activated by applying a current up to 1 × 106 A/cm2, the resistance decreased from 8.80 to 0.61 kΩ for a 10 μm wide, 50 μm long, and 0.2 μm thick n+ silicon strip, for instance. This reduction of resistance is close to that obtained by the conventional postimplantation annealing at 900°C for 30 min. To separate the effect of Joule heating from that of current activation, the temperature of the SOI strips during the current activation has been measured by Pt sensors. The result indicates that the temperature rise due to Joule heating is low and cannot explain the observed activation. We conclude that implanted dopants in Si can be activated by current stressing. To confirm it, carrier concentration obtained by Hall measurement is presented. © 1999 American Institute of Physics.
AB - We have activated heavily boron-doped and arsenic-doped silicon-on-insulator (SOI) strips by applying electrical current. The SOI strips were implanted with 40 keV BF+2 or As+ at a dosage of 5 × 1015 ions/cm2. Without postimplantation annealing, these implanted SOI strips can be activated by applying a current up to 1 × 106 A/cm2, the resistance decreased from 8.80 to 0.61 kΩ for a 10 μm wide, 50 μm long, and 0.2 μm thick n+ silicon strip, for instance. This reduction of resistance is close to that obtained by the conventional postimplantation annealing at 900°C for 30 min. To separate the effect of Joule heating from that of current activation, the temperature of the SOI strips during the current activation has been measured by Pt sensors. The result indicates that the temperature rise due to Joule heating is low and cannot explain the observed activation. We conclude that implanted dopants in Si can be activated by current stressing. To confirm it, carrier concentration obtained by Hall measurement is presented. © 1999 American Institute of Physics.
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U2 - 10.1063/1.370928
DO - 10.1063/1.370928
M3 - RGC 21 - Publication in refereed journal
SN - 0021-8979
VL - 86
SP - 1552
EP - 1557
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 3
ER -