DONOR CREATION DURING OXYGEN IMPLANTED BURIED OXIDE FORMATION

M.  DELFINO; P.K. CHU

doi:10.1557/proc-53-245

DONOR CREATION DURING OXYGEN IMPLANTED BURIED OXIDE FORMATION

M. DELFINO, P.K. CHU

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

Enhanced electron conductivity is observed in silicon that has been implanted with oxygen ions to form a buried oxide layer. The conductivity is attributed to donors that are created in the silicon both above and below the oxide. Secondary ion mass spectrometry and Rutherford backscattering spectroscopy show that, during subsequent annealing, oxygen accumulates only in the silicon surface. This causes the donors in the silicon surface to be easily activated to high concentrations and, unlike donors beneath the oxide, to be extremely resistant to thermal annihilation.

Original language	English
Title of host publication	Semiconductor-on-Insulator and Thin Film Transistor Technology
Pages	245-250
DOIs	https://doi.org/10.1557/proc-53-245
Publication status	Published - Dec 1985
Externally published	Yes
Event	1985 Materials Research Society (MRS) Fall Meeting - Boston, United States Duration: 2 Dec 1985 → 7 Dec 1985 http://www.mrs.org/fall1985

Publication series

Name	Materials Research Society Symposium - Proceedings
Volume	53
ISSN (Print)	0272-9172
ISSN (Electronic)	1946-4274

Conference

Conference	1985 Materials Research Society (MRS) Fall Meeting
Place	United States
City	Boston
Period	2/12/85 → 7/12/85
Internet address	http://www.mrs.org/fall1985

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@inproceedings{db8a007431494600a6bd333fb609fc9e,

title = "DONOR CREATION DURING OXYGEN IMPLANTED BURIED OXIDE FORMATION",

abstract = "Enhanced electron conductivity is observed in silicon that has been implanted with oxygen ions to form a buried oxide layer. The conductivity is attributed to donors that are created in the silicon both above and below the oxide. Secondary ion mass spectrometry and Rutherford backscattering spectroscopy show that, during subsequent annealing, oxygen accumulates only in the silicon surface. This causes the donors in the silicon surface to be easily activated to high concentrations and, unlike donors beneath the oxide, to be extremely resistant to thermal annihilation.",

author = "M. DELFINO and P.K. CHU",

year = "1985",

month = dec,

doi = "10.1557/proc-53-245",

language = "English",

isbn = "0931837189",

series = "Materials Research Society Symposium - Proceedings",

pages = "245--250",

booktitle = "Semiconductor-on-Insulator and Thin Film Transistor Technology",

note = "1985 Materials Research Society (MRS) Fall Meeting ; Conference date: 02-12-1985 Through 07-12-1985",

url = "http://www.mrs.org/fall1985",

}

DONOR CREATION DURING OXYGEN IMPLANTED BURIED OXIDE FORMATION. / DELFINO, M. ; CHU, P.K.
Semiconductor-on-Insulator and Thin Film Transistor Technology . 1985. p. 245-250 (Materials Research Society Symposium - Proceedings; Vol. 53).

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - DONOR CREATION DURING OXYGEN IMPLANTED BURIED OXIDE FORMATION

AU - DELFINO, M.

AU - CHU, P.K.

PY - 1985/12

Y1 - 1985/12

N2 - Enhanced electron conductivity is observed in silicon that has been implanted with oxygen ions to form a buried oxide layer. The conductivity is attributed to donors that are created in the silicon both above and below the oxide. Secondary ion mass spectrometry and Rutherford backscattering spectroscopy show that, during subsequent annealing, oxygen accumulates only in the silicon surface. This causes the donors in the silicon surface to be easily activated to high concentrations and, unlike donors beneath the oxide, to be extremely resistant to thermal annihilation.

AB - Enhanced electron conductivity is observed in silicon that has been implanted with oxygen ions to form a buried oxide layer. The conductivity is attributed to donors that are created in the silicon both above and below the oxide. Secondary ion mass spectrometry and Rutherford backscattering spectroscopy show that, during subsequent annealing, oxygen accumulates only in the silicon surface. This causes the donors in the silicon surface to be easily activated to high concentrations and, unlike donors beneath the oxide, to be extremely resistant to thermal annihilation.

U2 - 10.1557/proc-53-245

DO - 10.1557/proc-53-245

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 0931837189

T3 - Materials Research Society Symposium - Proceedings

SP - 245

EP - 250

BT - Semiconductor-on-Insulator and Thin Film Transistor Technology

T2 - 1985 Materials Research Society (MRS) Fall Meeting

Y2 - 2 December 1985 through 7 December 1985

ER -

DONOR CREATION DURING OXYGEN IMPLANTED BURIED OXIDE FORMATION

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