DONOR CREATION DURING OXYGEN IMPLANTED BURIED OXIDE FORMATION

Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)peer-review

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Author(s)

Detail(s)

Original languageEnglish
Title of host publicationSemiconductor-on-Insulator and Thin Film Transistor Technology
Pages245-250
Publication statusPublished - Dec 1985
Externally publishedYes

Publication series

NameMaterials Research Society Symposium - Proceedings
Volume53
ISSN (Print)0272-9172
ISSN (Electronic)1946-4274

Conference

Title1985 Materials Research Society (MRS) Fall Meeting
PlaceUnited States
CityBoston
Period2 - 7 December 1985

Abstract

Enhanced electron conductivity is observed in silicon that has been implanted with oxygen ions to form a buried oxide layer. The conductivity is attributed to donors that are created in the silicon both above and below the oxide. Secondary ion mass spectrometry and Rutherford backscattering spectroscopy show that, during subsequent annealing, oxygen accumulates only in the silicon surface. This causes the donors in the silicon surface to be easily activated to high concentrations and, unlike donors beneath the oxide, to be extremely resistant to thermal annihilation.

Citation Format(s)

DONOR CREATION DURING OXYGEN IMPLANTED BURIED OXIDE FORMATION. / DELFINO, M. ; CHU, P.K.

Semiconductor-on-Insulator and Thin Film Transistor Technology . 1985. p. 245-250 (Materials Research Society Symposium - Proceedings; Vol. 53).

Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)peer-review