Dislocation-induced ultra-low lattice thermal conductivity in rare earth doped β-Zn4Sb3
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
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Detail(s)
Original language | English |
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Pages (from-to) | 95-101 |
Number of pages | 7 |
Journal / Publication | Scripta Materialia |
Volume | 174 |
Online published | 5 Sep 2019 |
Publication status | Published - 1 Jan 2020 |
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Abstract
Defect engineering in thermoelectric materials leads to the formation of exotic transport properties. Specifically, reduction in lattice thermal conductivity (кL) can be realized through scattering of low and high-frequency phonons by interfacial and point defects respectively. Herein we explore such phenomena by inducing dense dislocations through doping of rare earth (RE) impurities in β-(Zn1−xREx)4Sb3 [x = 0.3–0.5 at.%] as phonon scattering source of all frequencies. Lattice anharmonicity created results in an ultra-low кL of ~0.15 W/mK for β-(Zn0.997 Yb0.003)4Sb3. Vibrational properties and phonon scattering altered by the lattice anharmonicity are studied in detail through terahertz and infrared spectroscopies.
Research Area(s)
- Anharmonicity, Defect engineering, Impurity-doping, Lattice dislocations, Thermal conductivity, Thermoelectrics
Citation Format(s)
Dislocation-induced ultra-low lattice thermal conductivity in rare earth doped β-Zn4Sb3. / Karthikeyan, Vaithinathan; Arava, Clement Manohar; Hlaing, May Zin et al.
In: Scripta Materialia, Vol. 174, 01.01.2020, p. 95-101.Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review