Dislocation array reflection enhances strain hardening of a dual-phase heterostructured high-entropy alloy

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • Yi Liu
  • Mengning Xu
  • Lirong Xiao
  • Xuefei Chen
  • Zhaohua Hu
  • Bo Gao
  • Ningning Liang
  • Yang Cao
  • Hao Zhou

Detail(s)

Original languageEnglish
Pages (from-to)638-647
Journal / PublicationMaterials Research Letters
Volume11
Issue number8
Online published9 May 2023
Publication statusPublished - 2023

Link(s)

Abstract

Piling-ups of geometrically necessary dislocation (GND) arrays against interfaces are known to produce hetero-deformation induced (HDI) strengthening and strain hardening to enhance the strength and ductility of heterostructured materials. Here we report an interesting dislocation mechanism that can produce strong HDI hardening: consecutive reflections of GND planar piling-up arrays near the opposite phase boundaries in a heterostructured AlCoCrFeNi2 high entropy alloy (HEA). In contrast, dislocation transmission was found at grain boundaries in the fcc phase. The discovery here provides guidance for future materials design, which may improve the combination of strength and ductility of metallic materials. © 2023 The Author(s). Published by Informa UK Limited, trading as Taylor & Francis Group.

Research Area(s)

  • deformation mechanism, Heterostructured materials, High entropy alloys, in-situ TEM, interfaces

Citation Format(s)

Dislocation array reflection enhances strain hardening of a dual-phase heterostructured high-entropy alloy. / Liu, Yi; Xu, Mengning; Xiao, Lirong et al.
In: Materials Research Letters, Vol. 11, No. 8, 2023, p. 638-647.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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