Dislocation array reflection enhances strain hardening of a dual-phase heterostructured high-entropy alloy

Yi Liu; Mengning Xu; Lirong Xiao; Xuefei Chen; Zhaohua Hu; Bo Gao; Ningning Liang; Yuntian Zhu; Yang Cao; Hao Zhou

doi:10.1080/21663831.2023.2208166

Dislocation array reflection enhances strain hardening of a dual-phase heterostructured high-entropy alloy

Yi Liu, Mengning Xu, Lirong Xiao, Xuefei Chen, Zhaohua Hu, Bo Gao, Ningning Liang, Yuntian Zhu, Yang Cao^*, Hao Zhou^*

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

70 Citations (Scopus)

52 Downloads (CityUHK Scholars)

Abstract

Piling-ups of geometrically necessary dislocation (GND) arrays against interfaces are known to produce hetero-deformation induced (HDI) strengthening and strain hardening to enhance the strength and ductility of heterostructured materials. Here we report an interesting dislocation mechanism that can produce strong HDI hardening: consecutive reflections of GND planar piling-up arrays near the opposite phase boundaries in a heterostructured AlCoCrFeNi₂ high entropy alloy (HEA). In contrast, dislocation transmission was found at grain boundaries in the fcc phase. The discovery here provides guidance for future materials design, which may improve the combination of strength and ductility of metallic materials. © 2023 The Author(s). Published by Informa UK Limited, trading as Taylor & Francis Group.

Original language	English
Pages (from-to)	638-647
Journal	Materials Research Letters
Volume	11
Issue number	8
Online published	9 May 2023
DOIs	https://doi.org/10.1080/21663831.2023.2208166
Publication status	Published - 2023

Research Keywords

deformation mechanism
Heterostructured materials
High entropy alloys
in-situ TEM
interfaces

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title = "Dislocation array reflection enhances strain hardening of a dual-phase heterostructured high-entropy alloy",

abstract = "Piling-ups of geometrically necessary dislocation (GND) arrays against interfaces are known to produce hetero-deformation induced (HDI) strengthening and strain hardening to enhance the strength and ductility of heterostructured materials. Here we report an interesting dislocation mechanism that can produce strong HDI hardening: consecutive reflections of GND planar piling-up arrays near the opposite phase boundaries in a heterostructured AlCoCrFeNi2 high entropy alloy (HEA). In contrast, dislocation transmission was found at grain boundaries in the fcc phase. The discovery here provides guidance for future materials design, which may improve the combination of strength and ductility of metallic materials. {\textcopyright} 2023 The Author(s). Published by Informa UK Limited, trading as Taylor & Francis Group.",

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author = "Yi Liu and Mengning Xu and Lirong Xiao and Xuefei Chen and Zhaohua Hu and Bo Gao and Ningning Liang and Yuntian Zhu and Yang Cao and Hao Zhou",

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T1 - Dislocation array reflection enhances strain hardening of a dual-phase heterostructured high-entropy alloy

AU - Liu, Yi

AU - Xu, Mengning

AU - Xiao, Lirong

AU - Chen, Xuefei

AU - Hu, Zhaohua

AU - Gao, Bo

AU - Liang, Ningning

AU - Zhu, Yuntian

AU - Cao, Yang

AU - Zhou, Hao

PY - 2023

Y1 - 2023

N2 - Piling-ups of geometrically necessary dislocation (GND) arrays against interfaces are known to produce hetero-deformation induced (HDI) strengthening and strain hardening to enhance the strength and ductility of heterostructured materials. Here we report an interesting dislocation mechanism that can produce strong HDI hardening: consecutive reflections of GND planar piling-up arrays near the opposite phase boundaries in a heterostructured AlCoCrFeNi2 high entropy alloy (HEA). In contrast, dislocation transmission was found at grain boundaries in the fcc phase. The discovery here provides guidance for future materials design, which may improve the combination of strength and ductility of metallic materials. © 2023 The Author(s). Published by Informa UK Limited, trading as Taylor & Francis Group.

AB - Piling-ups of geometrically necessary dislocation (GND) arrays against interfaces are known to produce hetero-deformation induced (HDI) strengthening and strain hardening to enhance the strength and ductility of heterostructured materials. Here we report an interesting dislocation mechanism that can produce strong HDI hardening: consecutive reflections of GND planar piling-up arrays near the opposite phase boundaries in a heterostructured AlCoCrFeNi2 high entropy alloy (HEA). In contrast, dislocation transmission was found at grain boundaries in the fcc phase. The discovery here provides guidance for future materials design, which may improve the combination of strength and ductility of metallic materials. © 2023 The Author(s). Published by Informa UK Limited, trading as Taylor & Francis Group.

KW - deformation mechanism

KW - Heterostructured materials

KW - High entropy alloys

KW - in-situ TEM

KW - interfaces

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U2 - 10.1080/21663831.2023.2208166

DO - 10.1080/21663831.2023.2208166

M3 - RGC 21 - Publication in refereed journal

SN - 2166-3831

VL - 11

SP - 638

EP - 647

JO - Materials Research Letters

JF - Materials Research Letters

IS - 8

ER -

Dislocation array reflection enhances strain hardening of a dual-phase heterostructured high-entropy alloy

Abstract

Research Keywords

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