Disconnection description of triple-junction motion

Spencer L. Thomas, Chaozhen Wei, Jian Han, Yang Xiang, David J. Srolovitz*

*Corresponding author for this work

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

Abstract

Grain boundary (GB) migration in polycrystalline materials necessarily implies the concurrent motion of triple junctions (TJs), the lines along which three GBs meet. Today, we understand that GB migration occurs through the motion of disconnections in the GB plane (line defects with both step and dislocation character). We present evidence from molecular dynamics grain growth simulations and idealized microstructures that demonstrates that TJ motion and GB migration are coupled through disconnection dynamics. Based on these results, we develop a theory of coupled GB/TJ migration and use it to develop a physically based, disconnection mechanism-specific continuum model of microstructure evolution. The continuum approach provides a means of reducing the complexity of the discrete disconnection picture to extract the features of disconnection dynamics that are important for microstructure evolution. We implement this model in a numerical, continuum simulation and demonstrate that it is capable of reproducing the molecular dynamics (MD) simulation results.
Original languageEnglish
Pages (from-to)8756–8765
JournalPNAS: Proceedings of the National Academy of Sciences of the United States of America
Volume116
Issue number18
Online published15 Apr 2019
DOIs
Publication statusPublished - 30 Apr 2019

Research Keywords

  • materials science
  • metals
  • microstructure evolution
  • grain boundary migration
  • molecular dynamics
  • TILT GRAIN-BOUNDARIES
  • MOLECULAR-DYNAMICS
  • SLIDING MECHANISMS
  • GROWTH KINETICS
  • SYMMETRIC TILT
  • MIGRATION
  • DISLOCATIONS
  • SHEAR
  • SIMULATION
  • STEPS

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