Direct Time-Resolved Observation of Carrier Trapping and Polaron Conductivity in BiVO4

Manuel Ziwritsch; Sönke Müller; Hannes Hempel; Thomas Unold; Fatwa F. Abdi; Roel Van De Krol; Dennis Friedrich; Rainer Eichberger

doi:10.1021/acsenergylett.6b00423

Direct Time-Resolved Observation of Carrier Trapping and Polaron Conductivity in BiVO₄

Manuel Ziwritsch, Sönke Müller, Hannes Hempel, Thomas Unold, Fatwa F. Abdi, Roel Van De Krol, Dennis Friedrich, Rainer Eichberger^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

122 Citations (Scopus)

Abstract

BiVO₄ is a promising photoanode candidate for water splitting applications, but its microscopic charge carrier transport properties are not yet fully understood. We investigated the photoinduced carrier mobility for undoped and 1% tungsten-doped BiVO₄ thin films in an early time window from 1 ps to 1 ns using THz spectroscopy. The combined electron-hole effective mobility gradually decreases with time by 1 order of magnitude starting at an upper limit of ∼0.4 cm² V^-1 s^-1. The loss is attributed to carrier localization. We provide for the first time direct time-resolved evidence of hole polaron formation accompanied by the temporal buildup of a polaron population in parallel to initial carrier trapping. A mobility of 0.02 cm² V^-1 s^-1 is found for the self-trapped carriers, which leads to a thermal hopping activation energy of ∼90 meV. © 2016 American Chemical Society.

Original language	English
Pages (from-to)	888-894
Journal	ACS Energy Letters
Volume	1
Issue number	5
DOIs	https://doi.org/10.1021/acsenergylett.6b00423
Publication status	Published - 11 Nov 2016
Externally published	Yes

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title = "Direct Time-Resolved Observation of Carrier Trapping and Polaron Conductivity in BiVO4",

abstract = "BiVO4 is a promising photoanode candidate for water splitting applications, but its microscopic charge carrier transport properties are not yet fully understood. We investigated the photoinduced carrier mobility for undoped and 1% tungsten-doped BiVO4 thin films in an early time window from 1 ps to 1 ns using THz spectroscopy. The combined electron-hole effective mobility gradually decreases with time by 1 order of magnitude starting at an upper limit of ∼0.4 cm2 V-1 s-1. The loss is attributed to carrier localization. We provide for the first time direct time-resolved evidence of hole polaron formation accompanied by the temporal buildup of a polaron population in parallel to initial carrier trapping. A mobility of 0.02 cm2 V-1 s-1 is found for the self-trapped carriers, which leads to a thermal hopping activation energy of ∼90 meV. {\textcopyright} 2016 American Chemical Society.",

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T1 - Direct Time-Resolved Observation of Carrier Trapping and Polaron Conductivity in BiVO4

AU - Ziwritsch, Manuel

AU - Müller, Sönke

AU - Hempel, Hannes

AU - Unold, Thomas

AU - Abdi, Fatwa F.

AU - Van De Krol, Roel

AU - Friedrich, Dennis

AU - Eichberger, Rainer

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 2016/11/11

Y1 - 2016/11/11

N2 - BiVO4 is a promising photoanode candidate for water splitting applications, but its microscopic charge carrier transport properties are not yet fully understood. We investigated the photoinduced carrier mobility for undoped and 1% tungsten-doped BiVO4 thin films in an early time window from 1 ps to 1 ns using THz spectroscopy. The combined electron-hole effective mobility gradually decreases with time by 1 order of magnitude starting at an upper limit of ∼0.4 cm2 V-1 s-1. The loss is attributed to carrier localization. We provide for the first time direct time-resolved evidence of hole polaron formation accompanied by the temporal buildup of a polaron population in parallel to initial carrier trapping. A mobility of 0.02 cm2 V-1 s-1 is found for the self-trapped carriers, which leads to a thermal hopping activation energy of ∼90 meV. © 2016 American Chemical Society.

AB - BiVO4 is a promising photoanode candidate for water splitting applications, but its microscopic charge carrier transport properties are not yet fully understood. We investigated the photoinduced carrier mobility for undoped and 1% tungsten-doped BiVO4 thin films in an early time window from 1 ps to 1 ns using THz spectroscopy. The combined electron-hole effective mobility gradually decreases with time by 1 order of magnitude starting at an upper limit of ∼0.4 cm2 V-1 s-1. The loss is attributed to carrier localization. We provide for the first time direct time-resolved evidence of hole polaron formation accompanied by the temporal buildup of a polaron population in parallel to initial carrier trapping. A mobility of 0.02 cm2 V-1 s-1 is found for the self-trapped carriers, which leads to a thermal hopping activation energy of ∼90 meV. © 2016 American Chemical Society.

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U2 - 10.1021/acsenergylett.6b00423

DO - 10.1021/acsenergylett.6b00423

M3 - RGC 21 - Publication in refereed journal

SN - 2380-8195

VL - 1

SP - 888

EP - 894

JO - ACS Energy Letters

JF - ACS Energy Letters

IS - 5

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