Direct observation of the amphoteric behavior of Ge in InP modified by P co-implantation

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

Detail(s)

Original languageEnglish
Pages (from-to)939-941
Journal / PublicationApplied Physics Letters
Volume71
Issue number7
Publication statusPublished - 18 Aug 1997
Externally publishedYes

Abstract

We have investigated the preferred substitution of Ge in InP by altering the local stoichiometry of the InP substrate. By co-implanting P with Ge to create a group V-rich environment, we directly observed an enhancement of the Ge substituting the In sublattice. A corresponding increase in the n-type conductivity by as much as three times was also observed in the Ge and P co-implanted sample. However, due to the altered local stoichiometry, the Ge solubility in InP was reduced by a factor of 2. The residual crystalline damage in the P co-implanted InP after annealing was also decreased due to the compensation of the nonstoichiometry related damage by the excess P in the middle of the implanted region. © 1997 American Institute of Physics.

Citation Format(s)

Direct observation of the amphoteric behavior of Ge in InP modified by P co-implantation. / Yu, Kin Man; Ridgway, M. C.

In: Applied Physics Letters, Vol. 71, No. 7, 18.08.1997, p. 939-941.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review