Direct observation of structural relaxation in amorphous compound semiconductors

G. De M. Azevedo; C. J. Glover; K. M. Yu; G. J. Foran; M. C. Ridgway

doi:10.1016/S0168-583X(03)00926-1

Direct observation of structural relaxation in amorphous compound semiconductors

G. De M. Azevedo, C. J. Glover, K. M. Yu, G. J. Foran, M. C. Ridgway

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

2 Citations (Scopus)

Abstract

Extended X-ray absorption fine structure measurements have been used to characterize, at the atomic level, the thermally induced structural relaxation of InAs amorphized by ion implantation. Our results are consistent with a relaxation mechanism mediated by point-defect annihilation with concomitant reduction in both chemical and structural disorder. Though relaxation yields a decrease in chemical disorder, homopolar bonding is still retained in the fully relaxed amorphous structure. © 2003 Elsevier Science B.V. All rights reserved.

Original language	English
Pages (from-to)	1024-1027
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	206
DOIs	https://doi.org/10.1016/S0168-583X(03)00926-1
Publication status	Published - May 2003
Externally published	Yes
Event	13th International conference on Ion beam modification of Mate - Kobe, Japan Duration: 1 Sept 2002 → 6 Sept 2002

Research Keywords

Amorphous solids
EXAFS
InAs
Ion implantation

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10.1016/S0168-583X(03)00926-1

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title = "Direct observation of structural relaxation in amorphous compound semiconductors",

abstract = "Extended X-ray absorption fine structure measurements have been used to characterize, at the atomic level, the thermally induced structural relaxation of InAs amorphized by ion implantation. Our results are consistent with a relaxation mechanism mediated by point-defect annihilation with concomitant reduction in both chemical and structural disorder. Though relaxation yields a decrease in chemical disorder, homopolar bonding is still retained in the fully relaxed amorphous structure. {\textcopyright} 2003 Elsevier Science B.V. All rights reserved.",

keywords = "Amorphous solids, EXAFS, InAs, Ion implantation",

author = "Azevedo, {G. De M.} and Glover, {C. J.} and Yu, {K. M.} and Foran, {G. J.} and Ridgway, {M. C.}",

year = "2003",

month = may,

doi = "10.1016/S0168-583X(03)00926-1",

language = "English",

volume = "206",

pages = "1024--1027",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier B.V.",

note = "13th International conference on Ion beam modification of Mate ; Conference date: 01-09-2002 Through 06-09-2002",

}

Direct observation of structural relaxation in amorphous compound semiconductors. / Azevedo, G. De M.; Glover, C. J.; Yu, K. M. et al.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 206, 05.2003, p. 1024-1027.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

TY - JOUR

T1 - Direct observation of structural relaxation in amorphous compound semiconductors

AU - Azevedo, G. De M.

AU - Glover, C. J.

AU - Yu, K. M.

AU - Foran, G. J.

AU - Ridgway, M. C.

PY - 2003/5

Y1 - 2003/5

N2 - Extended X-ray absorption fine structure measurements have been used to characterize, at the atomic level, the thermally induced structural relaxation of InAs amorphized by ion implantation. Our results are consistent with a relaxation mechanism mediated by point-defect annihilation with concomitant reduction in both chemical and structural disorder. Though relaxation yields a decrease in chemical disorder, homopolar bonding is still retained in the fully relaxed amorphous structure. © 2003 Elsevier Science B.V. All rights reserved.

AB - Extended X-ray absorption fine structure measurements have been used to characterize, at the atomic level, the thermally induced structural relaxation of InAs amorphized by ion implantation. Our results are consistent with a relaxation mechanism mediated by point-defect annihilation with concomitant reduction in both chemical and structural disorder. Though relaxation yields a decrease in chemical disorder, homopolar bonding is still retained in the fully relaxed amorphous structure. © 2003 Elsevier Science B.V. All rights reserved.

KW - Amorphous solids

KW - EXAFS

KW - InAs

KW - Ion implantation

UR - http://www.scopus.com/inward/record.url?scp=0037736647&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0037736647&origin=recordpage

U2 - 10.1016/S0168-583X(03)00926-1

DO - 10.1016/S0168-583X(03)00926-1

M3 - RGC 21 - Publication in refereed journal

SN - 0168-583X

VL - 206

SP - 1024

EP - 1027

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

T2 - 13th International conference on Ion beam modification of Mate

Y2 - 1 September 2002 through 6 September 2002

ER -

Direct observation of structural relaxation in amorphous compound semiconductors

Abstract

Research Keywords

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