Direct growth of β-SiC nanowires from SiOx thin films deposited on Si (1 0 0) substrate

β-SiC nanowires has been grown from SiO_x thin films deposited on Si (100) substrate at 1300 °C. A plate of graphite was used as the only carbon source. Argon was the only gas fed into the system. Structural and optical properties of the SiC nanowires were investigated using scanning electron microscopy, transmission electron microscopy and Raman spectroscopy. It was found that the as-grown SiC nanowires are nearly free from undesirable thick oxide shell typically found on SiC nanowires synthesized by other methods. The present approach has also the potential advantage of highly selective growth on patterned substrate. © 2002 Elsevier Science B.V. All rights reserved.