Direct Formation of Wafer Scale Graphene Thin Layers on Insulating Substrates by Chemical Vapor Deposition

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Ching-Yuan Su
  • Ang-Yu Lu
  • Chih-Yu Wu
  • Yi-Te Li
  • Keng-Ku Liu
  • Wenjing Zhang
  • Shi-Yen Lin
  • Zheng-Yu Juang
  • Yuan-Liang Zhong
  • Lain-Jong Li

Detail(s)

Original languageEnglish
Pages (from-to)3612-3616
Journal / PublicationNano Letters
Volume11
Issue number9
Online published11 Aug 2011
Publication statusPublished - 14 Sep 2011
Externally publishedYes

Abstract

Direct formation of high-quality and wafer scale graphene thin layers on insulating gate dielectrics such as SiO2 is emergent for graphene electronics using Si-wafer compatible fabrication. Here, we report that in a chemical vapor deposition process the carbon species dissociated on Cu surfaces not only result in graphene layers on top of the catalytic Cu thin films but also diffuse through Cu grain boundaries to the interface between Cu and underlying dielectrics. Optimization of the process parameters leads to a continuous and large-area graphene thin layers directly formed on top of the dielectrics. The bottom-gated transistor characteristics for the graphene films have shown quite comparable carrier mobility compared to the top-layer graphene. The proposed method allows us to achieve wafer-sized graphene on versatile insulating substrates without the need of graphene transfer.

Research Area(s)

  • chemical vapor deposition, Graphene, graphitization, Raman spectroscopy, transparent conductive film

Citation Format(s)

Direct Formation of Wafer Scale Graphene Thin Layers on Insulating Substrates by Chemical Vapor Deposition. / Su, Ching-Yuan; Lu, Ang-Yu; Wu, Chih-Yu; Li, Yi-Te; Liu, Keng-Ku; Zhang, Wenjing; Lin, Shi-Yen; Juang, Zheng-Yu; Zhong, Yuan-Liang; Chen, Fu-Rong; Li, Lain-Jong.

In: Nano Letters, Vol. 11, No. 9, 14.09.2011, p. 3612-3616.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review