Direct evidence of the fermi-energy-dependent formation of Mn interstitials in modulation-doped Ga 1-yAl yAs/Ga 1-xMn xAs/Ga 1-yAl yAs heterostructures

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

18 Scopus Citations
View graph of relations

Author(s)

  • W. Walukiewicz
  • T. Wojtowicz
  • W. L. Lim
  • X. Liu
  • M. Dobrowolska
  • J. K. Furdyna

Detail(s)

Original languageEnglish
Pages (from-to)4325-4327
Journal / PublicationApplied Physics Letters
Volume84
Issue number21
Publication statusPublished - 24 May 2004
Externally publishedYes

Abstract

The lattice locations of Mn in Ga 1-xMn xAs quantum wells between Be-doped Ga 1-yAl yAs barriers were analyzed using ion channeling techniques. After the modulation-doped barrier, a lower T C was found in heterostructures in which the Ga 1-xMn xAs layer was grown. A direct evidence that this reduction in T C is directly correlated with an increased formation of magnetically inactive Mn interstitials was provided. It was found that the formation of interstitials is induced by a shift of the Fermi energy as a result of the transfer of holes from the barrier to the quantum well during the growth.

Citation Format(s)

Direct evidence of the fermi-energy-dependent formation of Mn interstitials in modulation-doped Ga 1-yAl yAs/Ga 1-xMn xAs/Ga 1-yAl yAs heterostructures. / Yu, K. M.; Walukiewicz, W.; Wojtowicz, T. et al.

In: Applied Physics Letters, Vol. 84, No. 21, 24.05.2004, p. 4325-4327.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review