Direct evidence of Cu/cap/liner edge being the dominant electromigration path in dual damascene Cu interconnects

W. Shao; S. G. Mhaisalkar; T. Sritharan; A. V. Vairagar; H. J. Engelmann; O. Aubel; E. Zschech; A. M. Gusak; K. N. Tu

doi:10.1063/1.2437689

Direct evidence of Cu/cap/liner edge being the dominant electromigration path in dual damascene Cu interconnects

W. Shao, S. G. Mhaisalkar, T. Sritharan, A. V. Vairagar, H. J. Engelmann, O. Aubel, E. Zschech, A. M. Gusak, K. N. Tu

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

21 Citations (Scopus)

Abstract

In this investigation, Cu/dielectric-cap interface and Cu/cap/liner edge were studied in detail to identify the dominant path in electromigration stressed via-fed test structures that represent the dual damascene architectures in Cu metallization. The impact of the electron wind force on void evolution, agglomeration at the Cu/cap/liner edges, and interface diffusion was investigated based on morphological examinations. The investigations presented here show direct evidence of preferential accumulation of voids at the Cu/cap/liner edges. This preferential void accumulation towards Cu/cap/liner edge is analyzed and explained by means of a simplified Monte Carlo simulation. © 2007 American Institute of Physics.

Original language	English
Article number	052106
Journal	Applied Physics Letters
Volume	90
Issue number	5
DOIs	https://doi.org/10.1063/1.2437689
Publication status	Published - 2007
Externally published	Yes

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

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title = "Direct evidence of Cu/cap/liner edge being the dominant electromigration path in dual damascene Cu interconnects",

abstract = "In this investigation, Cu/dielectric-cap interface and Cu/cap/liner edge were studied in detail to identify the dominant path in electromigration stressed via-fed test structures that represent the dual damascene architectures in Cu metallization. The impact of the electron wind force on void evolution, agglomeration at the Cu/cap/liner edges, and interface diffusion was investigated based on morphological examinations. The investigations presented here show direct evidence of preferential accumulation of voids at the Cu/cap/liner edges. This preferential void accumulation towards Cu/cap/liner edge is analyzed and explained by means of a simplified Monte Carlo simulation. {\textcopyright} 2007 American Institute of Physics.",

author = "W. Shao and Mhaisalkar, {S. G.} and T. Sritharan and Vairagar, {A. V.} and Engelmann, {H. J.} and O. Aubel and E. Zschech and Gusak, {A. M.} and Tu, {K. N.}",

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T1 - Direct evidence of Cu/cap/liner edge being the dominant electromigration path in dual damascene Cu interconnects

AU - Shao, W.

AU - Mhaisalkar, S. G.

AU - Sritharan, T.

AU - Vairagar, A. V.

AU - Engelmann, H. J.

AU - Aubel, O.

AU - Zschech, E.

AU - Gusak, A. M.

AU - Tu, K. N.

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 2007

Y1 - 2007

N2 - In this investigation, Cu/dielectric-cap interface and Cu/cap/liner edge were studied in detail to identify the dominant path in electromigration stressed via-fed test structures that represent the dual damascene architectures in Cu metallization. The impact of the electron wind force on void evolution, agglomeration at the Cu/cap/liner edges, and interface diffusion was investigated based on morphological examinations. The investigations presented here show direct evidence of preferential accumulation of voids at the Cu/cap/liner edges. This preferential void accumulation towards Cu/cap/liner edge is analyzed and explained by means of a simplified Monte Carlo simulation. © 2007 American Institute of Physics.

AB - In this investigation, Cu/dielectric-cap interface and Cu/cap/liner edge were studied in detail to identify the dominant path in electromigration stressed via-fed test structures that represent the dual damascene architectures in Cu metallization. The impact of the electron wind force on void evolution, agglomeration at the Cu/cap/liner edges, and interface diffusion was investigated based on morphological examinations. The investigations presented here show direct evidence of preferential accumulation of voids at the Cu/cap/liner edges. This preferential void accumulation towards Cu/cap/liner edge is analyzed and explained by means of a simplified Monte Carlo simulation. © 2007 American Institute of Physics.

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U2 - 10.1063/1.2437689

DO - 10.1063/1.2437689

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

M1 - 052106

ER -

Direct evidence of Cu/cap/liner edge being the dominant electromigration path in dual damascene Cu interconnects

Abstract

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