Direct determination of carrier mobilities of OLED materials by admittance spectroscopy

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)22_Publication in policy or professional journalNot applicable

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Author(s)

Detail(s)

Original languageEnglish
Article number633313
Journal / PublicationProceedings of SPIE - The International Society for Optical Engineering
Volume6333
Publication statusPublished - 2006
Externally publishedYes

Conference

TitleOrganic Ligh Emitting Materials and Devices X
PlaceUnited States
CitySan Diego, CA
Period13 - 16 August 2006

Abstract

We show that admittance spectroscopy (AS) can be used to determine charge carrier mobilities and transport parameters in materials relevant to organic light-emitting diodes (OLEDs). Via computer simulation, we found that a plot of the negative differential susceptance vs frequency yields a maximum at a frequency τr-1. The position of the maximum τr-1 is related to the average carrier transit time τdc by τdc = 0.56 τr. Thus knowledge of τr can be used to determine the carrier mobility in the material. Devices with the structure anode/phenylamines/Ag have been designed to evaluate their mobilities. The extracted hole mobility data from AS in pristine and doped material systems are in excellent agreement with those independently extracted from time-of-flight (TOF) technique. In addition, materials with different energy levels of highest occupied molecular orbital (HOMO), are further examined in order to study the effects of injection barrier on the extracted mobility by AS. In the case of an Ohmic hole contact (e.g. ITO or Au /m-MTDATA), the mobility data is good agreement with TOF results. However, for a non-Ohmic contact, the extracted mobility appears to be smaller. Thus AS can be used a means of evaluating the quality of electric contact between the injection electrode and the organic material.

Research Area(s)

  • Admittance, Doping, Injection, Mobility, Organic, Susceptance