Diluted magnetic semiconductors formed by ion implantation and pulsed-laser melting

M.A. Scarpulla; U. Daud; K.M. Yu; O. Monteiro; Z. Liliental-Weber; D. Zakharov; W. Walukiewicz; O.D. Dubon

doi:10.1016/j.physb.2003.09.113

Diluted magnetic semiconductors formed by ion implantation and pulsed-laser melting

M.A. Scarpulla^*
, U. Daud
, K.M. Yu
, O. Monteiro
, Z. Liliental-Weber
, D. Zakharov
, W. Walukiewicz
, O.D. Dubon

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

28 Citations (Scopus)

Abstract

Using ion implantation followed by pulsed-laser melting (PLM), we have synthesized ferromagnetic films of Ga_1-xMn_xAs. Ion-channeling experiments reveal that these films are single crystalline and have high Mn substitutionality while variable temperature resistivity measurements reveal the strong Mn-hole interactions characteristic of carrier-mediated ferromagnetism in homogeneous Diluted magnetic semiconductors. We have observed Curie temperatures (T_Cs) of approximately 80 K for films with substitutional Mn concentrations of x = 0.04. The use of n-type counter doping as a means of increasing Mn substitutionality and T_C is explored by co-implantation of Mn and Te into GaAs_. In Ga _1-xMn_xP samples synthesized using our technique, the implanted layer regrows as an epitaxial single crystal capped by a highly defective surface layer. These samples display ferromagnetism with T _C≈23 K. © 2003 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	908-912
Journal	Physica B: Condensed Matter
Volume	340-342
DOIs	https://doi.org/10.1016/j.physb.2003.09.113
Publication status	Published - 31 Dec 2003
Externally published	Yes
Event	Proceedings of the 22nd International Conference on Defects in (ICDS-22) - Aarhus, Denmark Duration: 28 Jul 2003 → 1 Aug 2003

Research Keywords

Diluted magnetic semiconductor
GaMnAs
GaMnP
Ion implantation
Laser processing

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title = "Diluted magnetic semiconductors formed by ion implantation and pulsed-laser melting",

abstract = "Using ion implantation followed by pulsed-laser melting (PLM), we have synthesized ferromagnetic films of Ga1-xMnxAs. Ion-channeling experiments reveal that these films are single crystalline and have high Mn substitutionality while variable temperature resistivity measurements reveal the strong Mn-hole interactions characteristic of carrier-mediated ferromagnetism in homogeneous Diluted magnetic semiconductors. We have observed Curie temperatures (TCs) of approximately 80 K for films with substitutional Mn concentrations of x = 0.04. The use of n-type counter doping as a means of increasing Mn substitutionality and TC is explored by co-implantation of Mn and Te into GaAs. In Ga 1-xMnxP samples synthesized using our technique, the implanted layer regrows as an epitaxial single crystal capped by a highly defective surface layer. These samples display ferromagnetism with T C≈23 K. {\textcopyright} 2003 Elsevier B.V. All rights reserved.",

keywords = "Diluted magnetic semiconductor, GaMnAs, GaMnP, Ion implantation, Laser processing",

author = "M.A. Scarpulla and U. Daud and K.M. Yu and O. Monteiro and Z. Liliental-Weber and D. Zakharov and W. Walukiewicz and O.D. Dubon",

year = "2003",

month = dec,

day = "31",

doi = "10.1016/j.physb.2003.09.113",

language = "English",

volume = "340-342",

pages = "908--912",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier B.V.",

note = "Proceedings of the 22nd International Conference on Defects in (ICDS-22) ; Conference date: 28-07-2003 Through 01-08-2003",

}

TY - JOUR

T1 - Diluted magnetic semiconductors formed by ion implantation and pulsed-laser melting

AU - Scarpulla, M.A.

AU - Daud, U.

AU - Yu, K.M.

AU - Monteiro, O.

AU - Liliental-Weber, Z.

AU - Zakharov, D.

AU - Walukiewicz, W.

AU - Dubon, O.D.

PY - 2003/12/31

Y1 - 2003/12/31

N2 - Using ion implantation followed by pulsed-laser melting (PLM), we have synthesized ferromagnetic films of Ga1-xMnxAs. Ion-channeling experiments reveal that these films are single crystalline and have high Mn substitutionality while variable temperature resistivity measurements reveal the strong Mn-hole interactions characteristic of carrier-mediated ferromagnetism in homogeneous Diluted magnetic semiconductors. We have observed Curie temperatures (TCs) of approximately 80 K for films with substitutional Mn concentrations of x = 0.04. The use of n-type counter doping as a means of increasing Mn substitutionality and TC is explored by co-implantation of Mn and Te into GaAs. In Ga 1-xMnxP samples synthesized using our technique, the implanted layer regrows as an epitaxial single crystal capped by a highly defective surface layer. These samples display ferromagnetism with T C≈23 K. © 2003 Elsevier B.V. All rights reserved.

AB - Using ion implantation followed by pulsed-laser melting (PLM), we have synthesized ferromagnetic films of Ga1-xMnxAs. Ion-channeling experiments reveal that these films are single crystalline and have high Mn substitutionality while variable temperature resistivity measurements reveal the strong Mn-hole interactions characteristic of carrier-mediated ferromagnetism in homogeneous Diluted magnetic semiconductors. We have observed Curie temperatures (TCs) of approximately 80 K for films with substitutional Mn concentrations of x = 0.04. The use of n-type counter doping as a means of increasing Mn substitutionality and TC is explored by co-implantation of Mn and Te into GaAs. In Ga 1-xMnxP samples synthesized using our technique, the implanted layer regrows as an epitaxial single crystal capped by a highly defective surface layer. These samples display ferromagnetism with T C≈23 K. © 2003 Elsevier B.V. All rights reserved.

KW - Diluted magnetic semiconductor

KW - GaMnAs

KW - GaMnP

KW - Ion implantation

KW - Laser processing

UR - https://www.scopus.com/pages/publications/0346055257

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0346055257&origin=recordpage

U2 - 10.1016/j.physb.2003.09.113

DO - 10.1016/j.physb.2003.09.113

M3 - RGC 21 - Publication in refereed journal

SN - 0921-4526

VL - 340-342

SP - 908

EP - 912

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

T2 - Proceedings of the 22nd International Conference on Defects in (ICDS-22)

Y2 - 28 July 2003 through 1 August 2003

ER -

Diluted magnetic semiconductors formed by ion implantation and pulsed-laser melting

Abstract

Research Keywords

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